許渭州特聘教授 - 國立成功大學電機系

國立成功大學電資學院副院長. 2007~now. 國立成功大學尖端光電中心主任. 2005~2007. 國立成功大學電機工程學系系主任. 2002~now. 國立成功大學特聘教授. 2000~2005. 許渭州&nbsp特聘教授地址電機系館12樓92C07室EmailTEL+886-6-2757575ext.62350實驗室MOCVD1實驗室(R92C85/ext.62400-1285) 學經歷 學歷 1984 國立成功大學電機博士1981   國立成功大學電機碩士1979  國立成功大學電機學士 經歷 2015~2021 國立成功大學電資學院院長2012~2015國立成功大學電資學院副院長2007~now國立成功大學尖端光電中心主任2005~2007國立成功大學電機工程學系系主任2002~now 國立成功大學特聘教授2000~2005國立成功大學電機工程學系副主任兼微電子工程所所長1993~now國立成功大學電機系教授1985~1993國立成功大學電機系副教授1982~1985 國立成功大學電機系講師1991~1992美國州立佛羅里達大學訪問副教授1983~1984 美國四維公司工程師 研究領域 半導體元件物理電子工程電機工程 著作 期刊論文(Journal) more less Ching-SungLee,Wei-ChouHsu,Han-YinLiu,Yu-ChangChen,"Al2O3-DielectricIn0.18Al0.82N/AlN/GaN/SiMetal-Oxide-SemiconductorHeterostructureField-EffectTransistorsWithBacksideSubstrateMetal-TrenchStructure",IEEEJOURNALOFTHEELECTRONDEVICESSOCIETY,Vol:6,No:1,pp.68-73Ching-SungLee,Wei-ChouHsu,Yi-PingHuang,Han-YinLiu,Wen-LuhYangandShen-TinYang,"ComparativeStudyonGraded-BarrierAlxGa1-xN/AlN/GaN/SiMetal-Oxide-SemiconductorHeterostructureField-EffectTransistorbyUsingUltrasonicSprayPyrolysisDepositionTechnique",Semicond.Sci.Technol.33(2018)065004Lee,Ching-Sung;Hsu,Wei-Chou;Liu,Han-Yin,“Comparativestudiesofnormally-offAl0.26Ga0.74N/AlN/GaN/Sihighelectronmobilitytransistorswithdifferentgatestructures”,MaterialsScienceinSemiconductorProcessing,Vol.66,pp.39-43,Aug2017.(SCI)Chen,Po-An;Chiang,Meng-Hsueh;Hsu,Wei-Chou,“All-zigzaggraphenenanoribbonsforplanarinterconnectapplication”,JournalofAppliedPhysics,Vol.122,No.3,pp.034301,July212017.(SCI)Liu,Han-Yin;Huang,Ruei-Chin;Li,Yi-Ying,“AmorphousTiO2-BasedThin-FilmPhototransistor”,IEEEElectronDeviceLetters,Vol.38,No.6,pp.756-759,Jun2017.(SCI)Lee,Ching-Sung;Hsu,Wei-Chou;Chiang,Bo-Jung,“ComparativestudiesonAlGaN/GaN/SiMOS-HFETswithAl2O3/TiO2stackeddielectricsbyusinganultrasonicspraypyrolysisdepositiontechnique”,semiconductorscienceandtechnology,Vol.32,No.5,pp.055012,May2017.(SCI)C.S.Lee,H.Y.Liu,W.C.Hsu,S.F.Chen,“Normally-offAlGaN/AlN/GaN/Sioxide-passivatedHEMTsandMOSHEMTsbyusingCF4plasmaandozonewateroxidizationtreatment”,MaterialsScienceinSemiconductorProcessing,Vol.59,1Pages1–4March2017(SCI)H.Y.Liu,C.W.Lin,W.C.Hsu,C.S.Lee,M.H.Chiang,W.C.Sun,S.Y.Wei,andS.M.Yu,“IntegrationofGateRecessingandInSituCl-DopedAl2O3forEnhancement-ModeAlGaN/GaNMOSHEMTsFabrication”,IEEEElectronDeviceLetters,VOL.38,NO.1,JANUARY2017.(SCI)H.Y.Liu,W.C.Ou,andW.C.Hsu,“InvestigationofPostOxidationAnnealingEffectonH2O2-Grown-Al2O3/AlGaN/GaNMOSHEMTs”,IEEEElectronDevicesSociety,Vol.:4,Issue:5,pp.358-364,Sep.2016.(SCI)C.S.Lee*,W.C.Hsu,H.Y.LiuandB.J.Chiang,“Ti0.5Al0.5O-DielectricAlGaN/GaN/SiMetal-Oxide-SemiconductorHeterostructureField-EffectTransistorsbyUsingNon-VacuumUltrasonicSprayPyrolysisDeposition”,ECSJournalofSolidStateScienceandTechnology,Vol5,No.12,Q284-Q288,2016.(SCI)C.S.Lee, W.C.Hsu, H.Y.Liu, T.T.Wu, W.C.Sun, S.Y.Wei,S.M.Yu,"InvestigationsonMgO-dielectricGaN/AlGaN/GaNMOS-HEMTsbyusinganultrasonicspraypyrolysisdepositiontechnique,"Semicond.Sci.Tech.,Vol.31,No.5,Mar.2016.H.Y.Liu,W.C.Hsu,W.F.Chen,C.W.Lin,Y.Y.Li,C.S.Lee,W.C.Sun,S.Y.Wei,S.M.Yu,"InvestigationofAlGaN/GaNIon-SensitiveHeterostructureField-EffectTransistors-BasedpHSensorsWithAl2O3SurfacePassivationandSensingMembrane,"IEEESens.J.,Vol.16,No.10,May.2016.C.S.Lee1, W.C.Hsu, H.Y.Liu, J.H.Tsai,  H.H.Huang,"Al0.25Ga0.75N/GaNenhancement-modeMOShigh-electron-mobilitytransistorswithAl2O3dielectricobtainedbyozonewateroxidization,"Jpn.J.Appl.Phys.,Vol.55,No.4,Apr.2016.H.Y.Liu,Y.H.Wang,andW.C.Hsu,"SuppressionofDarkCurrentonAlGaN/GaNMetal-Semiconductor-MetalPhotodetectors"IEEESensJ.,vol.15,no.9,pp.5202-5207,Sep2015E.P.Yao,Y.J.Tsai,andW.C.Hsu,"Aninvestigationoforganicphotovoltaicsimprovementviaextensionoftheexcitonlifetime"Phys.Chem.Chem.Phys.,,vol.17,no.8,pp.5826-5831,2015C.S.Lee,W.C.Hsu,B.Y.Chou,H.Y.Liu,C.L.Yang,W.C.Sun,S.Y.Wei,S.M.Yu,C.L.Wu,"InvestigationsofTiO2-AlGaN/GaN/Si-PassivatedHFETsandMOS-HFETsUsingUltrasonicSprayPyrolysisDeposition"IEEETransationonElectronDevices,vol.62,no.5,pp.1460-1466,May2015H.Y.Liu,W.C.Hsu,C.S.Lee,B.Y.Chou,W.F.Chen,“EnhancedPerformancesofAlGaN/GaNIon-SensitiveField-EffectTransistorsUsingH2O2-GrownAl2O3forSensingMembraneandSurfacePassivationApplications,”IEEESens.J.,vol.15,no.6,pp.3359-66,June2015.(SCI,EI)E.P.Yao,S.M.Shiu,Y.J.Tsai,Y.S.Lin,W.C.Hsu,“CharacterizationofInterfacesBetweenContactsandActiveLayerinOrganicPhotovoltaicsUsingImpedanceSpectroscopyandEquivalentCircuitModel,”IEEEJ.Photovolt.,vol.62,no.5,pp.1460-6,May2015.(SCI,EI)H.Y.Liu,W.C.Hsu,B.Y.Chou,Y.H.Wang,“FabricationAlGaN/GaNMISUVPhotodetectorbyH2O2Oxidation,”IEEEPhotonicsTechnologyLetters,vol.27,no.1,pp.101-4Jan.2015.(SCI,EI)Y.S.Lin,S.F.Lin,W.C.Hsu,“MicrowaveandpowercharacteristicsofAlGaN/GaN/Sihigh-electronmobilitytransistorswithHfO2andTiO2passivation,”Semicond.Sci.Technol.,vol.30,no.1,pp.015016,Jan.2015.(SCI,EI)B.Y.Chou,W.C.Hsu,H.Y.Liu,C.S.Lee,Y.S.Wu,W.C.Sun,S.Y.Wei,Y.S.Min,M.H.Chiang,“InvestigationsofAlGaN/GaNMOS-HEMTwithAl2O3depositionbyultrasonicspraypyrolysismethod,”Semicond.Sci.Technol.,vol.30,no.1,pp.015009,Jan.2015.(SCI,EI)H.Y.Liu,W.C.Hsu,B.Y.Chou,Y.H.Wang,W.C.Sun,S.Y.Wei,S.M.Yu,M.H.Chiang,“GrowingAl2O3byUltrasonicSprayPyrolysisforAl2O3/AlGaN/GaNMetal-Insulator-SemiconductorUltravioletPhotodetectors,”IEEETrans.ElectronDevice,vol.61,no.12,pp.4062-9,Dec.2014.(SCI,EI)B.Y.Chou,C.S.Lee,C.L.Yang,W.C.Hsu,H.Y.Liu,W.C.Sun,S.Y.Wei,andS.M.Yu,”TiO2-DielectricAlGaN/GaN/SiMetal-Oxide-SemiconductorHighElectronMobilityTransistorsbyUsingNon-VacuumUltrasonicSprayPyrolysisDeposition,”IEEEElectronDeviceLett.,vol.35,pp.1091-1093,November2014.(SCI,EI)E.P.Yao,C.C.Chen,J.Gao,Y.Liu,Q.Chen,M.Cai,W.C.Hsu,Z.Hong,G.Li,Y.Yang,“Thestudyofsolventadditiveeffectsinefficientpolymerphotovoltaicsviaimpedancespectroscopy,”Sol.EnergyMater.Sol.Cells,vol.130,pp.20-26,November2014.(SCI,EI)C.S.Lee,J.C.Yeh,W.C.Hsu,H.Y.Liu,andB.Y.Chou,“ComparativeStudiesonInAlAs/InGaAsMOS-MHEMTswithDifferentCompressive/Tensile-StrainedChannelStructures,”ECSJ.SolidStateSci.Technol.,vol.3,pp.Q227-Q231,September2014.(SCI,EI)H.Y.Liu,W.C.Hsu,C.S.Lee,B.Y.Chou,Y.B.Liao,andM.H.Chiang,“InvestigationofTemperature-DependentCharacteristicsofAlGaN/GaNMOS-HEMTbyUsingHydrogenPeroxideOxidationTechnique,”IEEETrans.ElectronDevices,vol.61,pp.2760-2766,August2014.(SCI,EI)C.S.Lee,Y.H.Liao,B.Y.Chou,H.Y.Liu,andW.C.Hsu,“CompositeHfO2/Al2O3-dielectricAlGaAs/InGaAsMOS-HEMTsbyusingRFsputtering/ozonewateroxidation,”SuperlatticesMicrostruct.,vol.72,pp.194–203,August2014.(SCI,EI)H.Y.Liu,C.S.Lee,F.C.Liao,W.C.Hsu,B.Y.Chou,J.H.Tsai,andH.Y.Lee,“ComparativeStudiesonAlGaN/GaNMOS-HEMTswithStackedLa2O3/Al2O3DielectricStructures,”ECSJ.SolidStateSci.Technol.,vol.3,pp.N115-N119,August2014.(SCI,EI)E.P.Yao,Y.J.Tsai,andW.C.Hsu,“Investigationofthermalinstabilityofadditive-basedhigh-efficiencyorganicphotovoltaics,”Int.J.Photoenergy,vol.2014,pp.952528-1-952525-8,August2014.(SCI,EI)E.P.Yao,C.S.Ho,C.Yu,EL.Huang,Y.N.Lai,andW.C.Hsu,“AnAlternativeApproachforImprovingPerformanceofOrganicPhotovoltaicsbyLight-EnhancedAnnealing,”Int.J.Photoenergy,vol.2014,pp.120693-1-120693-7,July2014.(SCI,EI)Y.B.Liao,M.H.Chiang,N.Damrongplasit,W.C.Hsu,andT.J.KingLiu,“Designofgate-all-aroundsiliconMOSFETsfor6-TSRAMareaefficiencyandyield,”IEEETrans.ElectronDevice,vol.61,pp.2371-2377,July2014.(SCI,EI)Y.B.Liao,M.H.Chiang,Y.S.Lai,andW.C.Hsu,“StackgatetechniquefordopinglessbulkFinFET,”IEEETrans.ElectronDevice,vol.61,pp.963-968,April2014.(SCI,EI)H.Y.Liu,W.C.Hsu,B.Y.Chou,andY.H.Wang,“ASimplePassivationTechniqueforAlGaN/GaNUltravioletSchottkyBarrierPhotodetector,”IEEEPhotonicsTechnol.Lett.,vol.26,pp.138-141,Jan.2014.(SCI,EI)C.H.Wang,S.W.Wang,G.Doornbos,G.Astromskas,K.Bhuwalka,R.Contreras-Guerrero,M.Edirisooriya,J.S.Rojas-Ramirez,G.Vellianitis,R.Oxland,M.C.Holland,C.H.Hsieh,P.Ramvall,E.Lind,W.C.Hsu,L.E.Wernersson,R.Droopad,M.Passlack,andC.H.Diaz,“InAsholeinversionandbandgapinterfacestatedensityof2×1011cm2eV1atHfO2/InAsinterfaces,”Appl.Phys.Lett.,vol.103,pp.143510-1-4,Oct.2013.(SCI,EI)Han-YinLiu,Ching-SungLee,Wei-ChouHsu,Lung-YiTseng,Bo-YiChou,Chiu-ShengHo,andChang-LuenWu,“InvestigationsofAlGaN/AlN/GaNMOS-HEMTsonSiSubstratebyOzoneWaterOxidationMethod,”IEEETrans.ElectronDevices,vol.60,pp.2231-2237,Jul.2013.Y.B.Liao,M.H.Chiang,LaiY.S.,W.C.Hsu,“ApragmaticdesignmethodologyusingproperisolationanddopingforbulkFinFETs,”Solid-StateElectron.,vol.85,pp.48-53,Jul.2013.B.Y.Chou,W.C.Hsu*,C.S.Lee,H.Y.Liu,andC.S.Ho,“InvestigationsofAlGaN/GaNHFETsutilizingpost-metallizationetchingbynitricacidtreatment,”Semicond.Sci.Technol.,vol.28,pp.074003-1-8,Jul.2013.C.H.Chan,C.H.Ho,M.K.Chen,Y.S.Lin,Y.S.Huang,W.C.Hsu*,“OpticalcharacterizationofInAlAs/InGaAsmetamorphichigh-electronmobilitytransistorstructureswithtensileandcompressivestrain,”ThinSolidFilms,vol.529,pp.217-221,Feb.2013.C.S.Ho,W.C.Hsu*,Y.N.Lai,C.S.Lee,W.M.Chen,E.L.Huang,E.P.Yao,andC.W.Wang,“PerformanceImprovementinPoly(3-hexylthiophene):[6,6]-PhenylC61ButyricAcidMethylEsterPolymerSolarCellbyDopingWide-GapMaterialTris(phenylpyrazole)iridium,”Appl.Phys.Express,vol.6,pp.042301-1-4,Apr.2013.B.Y.Chou,W.C.Hsu*,C.S.Lee,H.Y.Liu,andC.S.Ho,“ComparativeStudiesofAlGaN/GaNMOS-HEMTswithStackedGateDielectricsbyMixedThinFilmGrowthMethod,”Semicond.Sci.Technol.,vol.28,pp.074005-1-6,Jul.2013.H.Y.Liu,B.Y.Chou,W.C.Hsu*,J.K.Sheu,C.S.Lee,andC.S.Ho,“EnhancedAlGaN/GaNMOS-HEMTPerformancebyUsingHydrogenPeroxideOxidationTechnique,”IEEETrans.ElectronDevices,vol.60,pp.213-220,Jan.2013.Y.C.Lin,Y.K.Luo,K.H.Chen,W.C.Hsu*,“LiquidCrystalDisplay(LCD)SuppliedbyHighlyIntegratedDual-SideDual-OutputSwitched-CapacitorDC-DCConverterWithOnlyTwoFlyingCapacitors,”IEEETrans.CircuitsSyst.I-Regul.Pap.,vol.59,pp.439-446,Feb.2012.Y.B.Liao,M.H.Chiang,K.Kim,W.C.Hsu*,“AssessmentofstructurevariationinsiliconnanowireFETsandimpactonSRAM,”Microelectron.J.,vol.43,pp.300-304,May.2012.Y.K.Luo,Y.P.Su,Y.P.Huang,Y.H.Lee,K.H.Chen,W.C.Hsu*,“Time-MultiplexingCurrentBalanceInterleavedCurrent-ModeBoostDC-DCConverterforAlleviatingtheEffectsofRight-half-planeZero,”IEEETrans.PowerElectron.,vol.27,pp.4098-4112,Sep.2012H.Y.Liu,B.Y.Chou,W.C.Hsu,C.S.Lee,andC.S.Ho,“Temperature-dependentinvestigationofAlGaN/GaNoxide-passivatedHEMTbyusinghydrogenperoxideoxidationmethod,”ECSJ.SolidStateSci.Technol.,vol.1,Q86-Q90,Aug,2012H.Y.Liu,B.Y.Chou,W.C.Hsu*,C.S.Lee,andC.S.Ho,“ASimpleGateDielectricFabricationProcessforAlGaN/GaNMetal-Oxide-SemiconductorHighElectronMobilityTransistors,”IEEEElectronDeviceLett.,vol.33,pp.997-999,Jul.2012C.S.Ho,C.S.Lee,W.C.Hsu*,C.Y.Lin,Y.N.Lai,andC.W.Wang,“Efficiencyimprovementsinsingle-heterojunctionorganicphotovoltaiccellsbyinsertionofwide-bandgapelectron-blockinglayers,”Solid-StateElectron.,vol.76,pp.101-103,Jul.2012C.S.Ho,E.L.Huang,W.C.Hsu*,C.S.Lee,Y.N.Lai,E.P.Yao,andC.W.Wang,“Thermaleffectonpolymersolarcellswithactivelayerconcentrationsof3-5wt%,”Synth.Met.,vol.162,pp.1164-1168,Jun.2012C.S.Lee,C.T.Hung,B.Y.Chou,W.C.Hsu,H.Y.Liu,C.S.HoandY.N.Lai,“ComparativestudiesofMOS-gate/oxide-passivatedAlGaAs/InGaAspHEMTsbyusingozonewateroxidationtechnique,”Semicond.Sci.Technol.,vol.27,pp.065006-(1-7),Jun.2012C.S.Lee,B.Y.Chou,M.Y.Lin,W.C.Hsu,H.Y.Liu,C.S.Ho,andY.N.Lai,“InvestigationsonAl0.2Ga0.8As/In0.2Ga0.8AsMOS-pHEMTswithDifferentShiftedΓ-GateStructures,”ECSJ.SolidStateSci.Technol.,vol.1,pp.Q1-Q5,Jul.2012.J.K.Liou,Y.J.Liu,C.C.Chen,P.C.Chou,W.C.Hsu,andW.C.Liu,“OnaGaN-BasedLight-EmittingDiodeWithanAluminumMetalMirrorDepositedonNaturally-TexturedV-ShapedPitsGrownonthep-GaNSurface,”IEEEElectronDeviceLett.,vol.33,pp.227-229,Feb.2012.H.Y.Liu,B.Y.Chou,W.C.Hsu,C.S.Lee,andC.S.Ho,“Noveloxide-passivatedAlGaN/GaNHEMTbyusinghydrogenperoxidetreatment,”IEEETrans.ElectronDevices,vol.58,no.12,pp.4430-4433,Dec.2011.(SCI,EI)Y.B.Liao,M.H.Chiang,K.Kim,andW.C.Hsu,“AssessmentofStructureVariationinSiliconNanowireFETsandImpactonSRAM,”Microelectron.J.,vol.43,no.5,pp.300-304,Dec.2011.(SCI,EI)J.R.Huang,W.C.Hsu,Y.J.Chen,T.B.Wang,H.I.Chen,andW.C.Liu,“InvestigationofHydrogen-SensingCharacteristicsofaPd/GaNSchottkyDiode,”IEEESens.J.,vol.11,pp.1194-1200,May,2011.(SCI,EI)H.C.Yu,C.T.Wan,W.C.Chen,W.C.Hsu,K.H.Su,C.Y.Huang,andY.K.Su,“PerformanceImprovementofInGaAsN/GaAsQuantumWellLasersbyUsingTrimethylantimonyPreflow,”Appl.Phys.Express,vol.4,pp.012103-1–012103-3,Jan.2011.(SCI,EI)C.S.Ho,E.L.Huang,W.C.Hsu,C.S.Lee,Y.N.Lai,andW.H.Lai,“EffectsofAnnealingonPolymerSolarCellswithHighPolythiophene-FullereneConcentrations,”Jpn.J.Appl.Phys,vol.50,pp.04DK21-1–04DK21-3,Apr.,2011.(SCI,EI)Y.K.Luo,C.C.Chiou,C.H.Wu,K.H.Chen,andW.C.Hsu,“TransientImprovementbyWindowTransientEnhancement(WTE)andOvershootSuppression(OSS)TechniquesinCurrentModeBoostConverter,”IEEETrans.PowerElectron.(SCI,EI)C.S.Lee,B.Y.Chou,andW.C.Hsu,“ANovelTransparentAZO-GatedAl0.2Ga0.8As/In0.2Ga0.8AspHEMTandPhotosensingCharacteristicsThereof,”IEEETrans.ElectronDevices,vol.58,pp.725-731,Mar.2011.(SCI,EI)Y.N.Lai,W.C.Hsu,C.S.Lee,C.W.Wang,C.S.Ho,M.C.Shih,andW.F.Lai,“ImprovedEfficiencyandHighColorPurityofTop-EmissionWhiteOrganicLightEmittingDiodebyAnodeOxidationTechnique,”ElectrochemicalandSolidStateLetters,vol.13,pp.J132-J135,Aug.2010.(SCI,EI)M.H.Chiang,Y.B.Liao,J.T.Lin,W.C.Hsu,C.Yu,P.C.Chiang,Y.Y.Hsu,W.H.Liu,S.S.Sheu,K.L.Su,M.J.Kao,andM.J.Tsai,“Lowpowerdesignofphase-changememorybasedonacomprehensivemodel,”IETComputersandDigitalTechniques,vol.4,pp.285-292,Jul.2010.(SCI,EI)W.C.Hsu,C.S.Lee,C.S.Ho,Y.N.Lai,J.C.Huang,B.Y.Chou,A.Y.Kao,H.H.Yeh,andC.L.Wu,“InAlAs/InGaAsMOS-MHEMTsbyUsingOzoneWaterOxidationTreatment,”ElectrochemicalandSolidStateLetters,vol.13,pp.H234-H236,Apr.2010.(SCI,EI)Y.N.Lai,W.C.Hsu,C.S.Lee,C.W.Wang,C.S.Ho,T.Y.Lu,andW.F.Lai,“EfficiencyImprovementofTop-EmissionOrganicLightEmittingDiodebyUsingUV-Ozone,DopedEmissionLayer,andHole-BlockingLayer,”J.Electrochem.Society,vol.157,pp.J25-J28,Dec.2010.(SCI,EI)Y.N.Lai,W.C.Hsu,C.S.Lee,C.W.Wang,S.W.Yeh,C.S.Ho,andW.F.Lai,“Improvedwhiteorganiclight-emittingDiodeswithmodifieddual-emission-layerdesigns,”Jpn.J.Appl.Phys.,vol.48,pp.072101,Jul.2009.(SCI,EI)W.C.Hsu,C.S.Lee,S.J.Yu,andY.J.Chen,“Highgate-voltageswingx-bandamplifiersbyusingIn0.425Al0.575As/InGaAsmetamorphichighelectronicmobilitytransistors,”J.ChineseInstituteofEngineers,vol.32,pp.391-396,Apr.2009.(SCI,EI)C.S.Lee,W.C.Hsu,C.S.Ho,andA.Y.Kao,“InvestigationsonIn0.45Al0.55As/InxGa1-xAsmetamorphichigh-electron-mobilitytransistorswithdoublegate-recessandSiNxpassivation,”J.Electrochem.Society,vol.156,pp.H367-H371,Mar.2009.(SCI,EI)C.S.Lee,B.I.Chou,W.C.Hsu,andK.H.Su,“Investigationsonthehighly-StablethermalcharacteristicsofadiluteAl0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAsheterostructurefieldeffecttransistor(HFET),”JournalofKoreanPhysicalSociety,vol.53,pp.3328-3333,Dec.2008.(SCI)S.J.Yu,H.M.Huang,C.S.Lee,C.L.Wu,andW.C.Hsu,“A26-38GHzmillimeter-wavebandAPDPsub-harmonicmixer,”MicrowaveandOpticalTechnologyLetters,vol.50,pp.2135-2138,Aug.2008.(SCI,EI)C.S.Lee,C.J.Chian,W.C.Hsu,K.H.Su,andS.J.Yu,“Channelcomposition-dependentcharacteristicsofdelta-dopedInxAl1-xAs/InyGa1-yAsmetamorphichighelectronmobilitytransistors,”JournalofKoreanPhysicalSociety,vol.52,pp.1086-1092,Apr.2008.(SCI)K.H.Su,W.C.Hsu,C.S.Lee,P.J.Hu,Y.H.Wu,L.Chang,R.S.Hsiao,J.F.Chen,andT.W.Chi,“InvestigationsonhighlystablethermalcharacteristicsofadiluteIn0.2Ga0.8AsSb/GaAsdoped-channelfield-effecttransistor,”Semiconductorscienceandtechnology,vol.23,pp.045012,Apr.2008.(SCI,EI)T.H.Tsai,J.R.Huang,K.W.Lin,W.C.Hsu,H.I.Chen,andW.C.Liu,“ImprovedhydrogensensingcharacteristicsofPt/SiO2/GaNSchottkydiode”,SensorActuat.B-chem.,vol.129,pp.292-302,Jan.2008.(SCI,EI)S.J.Yu,W.C.Hsu,C.S.Lee,C.S.Chang,C.L.Wu,andC.H.Chang,“Aflatgain/powerresponses6-18ghzpoweramplifiermimicwithhighpaebyusingtransformernetworks,”MicrowaveandOpticalTechnologyLetters,vol.50,pp.205-208,Jan.2008.(SCI,EI)D.H.Huang,W.C.Hsu,Y.S.Lin,andJ.C.Huang,“Thermal-stablecharacteristicsofmetamorphicdoubledelta-dopedheterostructurefield-effecttransistor,”Jpn.J.Appl.Phys.,part1,vol.46,pp.6595-6597,Oct.2007.(SCI,EI)T.H.Tsai,J.R.Huang,K.W.Lin,C.W.Hung,W.C.Hsu,H.I.Chen,andW.C.Liu,“Improvedhydrogen-sensingpropertiesofPt/SiO2/GaNSchottkydiode,”ElectrochemicalandSolidStateLetters,vol.10,pp.J158-J160,Oct.2007.(SCI,EI)K.HSu,W.C.Hsu,P.J.Hu,Y.J.Chen,C.S.Lee,Y.S.Lin,andC.L.Wu,“AnimprovedSymmetrically-GradedDoped-ChannelHeterostructureField-EffectTransistor,”JournaloftheKoreanPhysicalSociety,vol.50,pp.1878-1882,Jun.2007.(SCI)S.J.Yu,W.C.Hsu,C.S.Lee,C.H.Chang,C.L.WuandC.S.Chang,“AKu-bandThree-StageMMICLow-NoiseAmplifierwithSuperiorlyLowThermal-SensitivityCoefficients,”MicrowaveandOpticalTechnologyLetters,vol.49,pp.1637-1641,Jul.2007.(SCI,EI)J.R.Huang,W.C.Hsu,H.I.Chen,andW.C.Liu,“ComparativestudyofhydrogensensingcharacteristicsofaPd/GaNSchottkydiodeinairandN2atmospheres,”SensorActuat.B-chem.,vol.123,pp.1040-1048,May2007.(SCI,EI)K.H.Su,W.C.Hsu,C.S.Lee,P.J.Hu,R.S.Hsiao,J.F.Chen,andT.W.Chi,“HighlyStableThermalCharacteristicsofaNovelIn0.3Ga0.7As0.99N0.01(Sb)/GaAsHigh-Electron-MobilityTransistor,”Jpn.J.Appl.Phys.,part1,vol.46,pp.2344-2347,Apr.2007.(SCI,EI)D.H.Huang,W.C.Hsu,Y.S.Lin,J.H.Yeh,andJ.C.Huang,“Ametamorphicheterostructurefield-effecttransistorwithadoubledelta-dopedchannel,”Semiconductorscienceandtechnology,vol.22,pp.784-787,Jul.2007.(SCI,EI)T.B.Wang,W.C.Hsu,I.L.Chen,T.D.Lee,K.H.Su,H.P.D.YangandC.H.Chiou,“SingleModeInGaAsPhotonicCrystalVertical-CavitySurface-EmittingLasersemittingat1170nm,”J.Electrochem.Society,vol.154,pp.H351-H353,Mar.2007.(SCI,EI)I.L.Chen,W.C.Hsu,T.D.Lee,andC.H.Chiou,“Lowthresholdcurrentdensity,highlystrainedInGaAslasergrownbyMOCVD,”ThinSolidFilm,vol.515,pp.4522-4525,Mar.2007.(SCI,EI)Y.S.Lin,D.H.Huang,Y.W.Chen,J.C.Huang,andW.C.Hsu,“delta-dopedInGaP/GaAsheterostructure-emitterbipolartransistorgrownbymetalorganicchemicalvapordeposition,”ThinSolidFilm,vol.515,pp.3978-3981,Feb.2007.(SCI,EI)T.B.Wang,W.C.Hsu,J.L.Su,R.T.Hsu,Y.H.Wu,Y.S.Lin,andK.H.Su,“ComparisonofAl0.32Ga0.68N/GaNheterostructurefield-effecttransistorswithdifferentchannelthicknesses,”J.Electrochem.Society,vol.154,pp.H131-H133,Jan.2007.(SCI,EI)J.C.Huang,W.C.Hsu,C.S.Lee,D.H.Huang,andY.C.Yang,“High-Power-DensityandHigh-Gainδ-DopedIn0.425Al0.575As/In0.425Ga0.575AsLow-VoltageforOperation,”J.Electrochem.Society,vol.154,pp.H185-H190,Jan.2007(SCI,EI)K.H.Su,W.C.Hsu,C.S.Lee,T.Y.Wu,Y.H.Wu,L.Chang,R.S.Hsiao,J.F.Chen,andT.W.Chi,“ANovelDiluteAntimonyChannelIn0.2Ga0.8AsSb/GaAsHEMT,”IEEEElectronDeviceLett.vol.153,pp.96-99,Feb.2007.(SCI,EI)J.C.Huang,W.C.Hsu,C.S.Lee,W.C.Chang,andD.H.Huang,“Improvedhigh-temperaturecharacteristicsofasymmetricallygradedAlGaAs/InxGa1-xAs/AlGaAspHEMT,”Semiconductorscienceandtechnology,vol.21,pp.1675-1680,Dec.2006.(SCI,EI)K.H.Su,W.C.Hsu,C.S.Lee,I.L.Chen,Y.J.Chen,andC.L.Wu,“Comparativestudiesofdelta-dopedIn0.45Al0.55As/In0.53Ga0.47As/GaAsmetamorphicHEMTswithAu,Ti/Au,Ni/Au,andPt/Augates,”J.Electrochem.Society,vol.153,pp.G996-G1000,Sep.2006.(SCI,EI)T.B.Wang,W.C.Hsu,Y.W.Chen,andY.J.Chen,“InductivelycoupledplasmamesaetchedInGaN/GaNlightemittingdiodesusingCl-2/BCl3/Arplasma,”Jpn.J.Appl.Phys.,vol.45,pp.6800-6802,Sep.2006.(SCI,EI)I.Lo,J.R.Lian,H.Y.Wang,M.H.Gau,J.K.Tsai,J.C.Chiang,Y.J.Li,andW.C.Hsu,“Magnetotransportstudyonthedefectlevelsofdelta-dopedIn0.22Ga0.78As/GaAsquantumwells,”J.Appl.Phys.,vol.100,pp.063712,Sep.2006.(SCI,EI)J.R.Huang,W.C.Hsu,Y.J.Chen,T.B.Wang,K.W.Lin,H.I.Chen,andW.C.Liu,“ComparisonofhydrogensensingcharacteristicsforPd/GaNandPd/Al0.3Ga0.7AsSchottkydiodes,”SensorActuat.B-chem.,vol.117pp.151-158,Sep.2006.(SCI,EI)D.H.Huang,W.C.Hsu,Y.S.Lin,J.C.Huang,andC.L.Wu,“Strain-relaxedIn0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65AsHEMT,”J.Electrochem.Society,vol.153,pp.G826-G829,Jul.2006.(SCI,EI)I.L.Chen,W.C.Hsu,T.D.Lee,K.H.Su,C.H.Chiou,andG.Lin,“Temperature-dependentcharacteristicsandburn-inperformanceofGaAs-basedlong-wavelengthvertical-cavitysurface-emittinglasersemittingat1.26mum,”Semiconductorscienceandtechnology,vol.21,pp.886-889,Jul.2006.(SCI,EI)D.H.Lee,W.C.Hsu,Y.S.Lin,Y.H.Wu,R.T.Hsu,J.C.Huang,andY.K.Liao,“ComparativestudyofIn0.52Al0.48As/InxGa1-xAs/InPhigh-electron-mobilitytransistorswithasymmetricallygradedandaninverselygradedchannel,”Semiconductorscienceandtechnology,vol.21,pp.781-785,Jun.2006.(SCI,EI)C.S.Lee,Y.J.Cheng,W.C.Hsu,K.H.Su,J.C.Huang,D.H.Huang,andC.L.Wu,“High-temperaturethresholdcharacteristicsofasymmetricallygradedInAlAs/InxGa1-xAs/GaAsmetamorphichighelectronmobilitytransistor,”Appl.Phys.Lett.,vol.88pp.223506,May2006.(SCI,EI)J.C.Huang,W.C.Hsu,C.S.Lee,D.H.Huang,andM.F.Huang,“Characteristicsofdelta-dopedInAlAs/InGaAs/InPhighelectronmobilitytransistorswithalinearlygradedInxGa1-xAschannel,”Semiconductorscienceandtechnology,vol.21,pp.619-625,May2006.(SCI,EI)Y.S.Lin.,D.H.Huang,W.C.Hsu,K.H.Su,andT.B.Wang,“EnhancingthecurrentgaininInP/InGaAsdoubleheterojunctionbipolartransistorsusingemitteredgethinning,”Semiconductorscienceandtechnology,vol.21pp.303-305,Mar.2006.(SCI,EI)Y.S.Lin,D.H.Huang,W.C.Hsu,T.B.Wang,K.H.Su,J.C.Huang,andC.H.Ho,“ImprovedInAlGaP-basedheterostructurefield-effecttransistors,”Semiconductorscienceandtechnology,vol.21,pp.540-543,Apr.2006.(SCI,EI)C.S.Lee,W.C.Hsu,K.H.Su,J.C.Huang,D.H.Huang,andY.J.Chen,“Ni/Au-GateIn0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAsmetamorphichigh-electron-mobilitytransistors,”JournaloftheKoreanPhysicalSociety,vol.48,pp.653-657,Apr.2006.(SCI)S.J.Yu,W.C.Hsu,Y.J.Chen,andC.L.Wu,“Highpowerandhighbreakdowndelta-dopedIn0.35Al0.65As/In0.35Ga0.65AsmetamorphicHEMT,”Solid-StateElectronic.,vol.50,pp.291-296,Feb.2006.(SCI,EI)I.L.Chen,W.C.Hsu,H.C.Kuo,C.P.Sung,C.H.Chiou,J.M.Wang,Y.H.Chang,H.C.Yu,andT.D.Lee,“Effectofannealingonlow-threshold-currentlarge-wavelengthInGaAsquantumwellvertical-cavitylaser,”Jpn.J.Appl.Phys.,vol.45,pp.770-773,Feb.2006.(SCI,EI)W.C.Hsu,D.H.Huang,Y.S.Lin,Y.J.Chen,J.C.Huang,andC.L.Wu,“Performanceimprovementintensile-strainedIn0.5A10.5As/InxGa1-xAs/In0.5A10.5AsmetamorphicHEMT,”IEEETrans.ElectronDevices,vol.53,pp.406-412,Mar.2006.(SCI,EI)I.L.Chen,W.C.Hsu,T.D.Lee,H.C.Kuo,K.H.Su,C.H.Chiou,J.M.Wang,andY.H.Chang,“GrowthofhighlystrainedRnGaAsquantumwellsbymetalorganicchemicalvapordepositionwithapplicationtovertical-cavitysurface-emittinglaser,”Jpn.J.Appl.Phys.,vol.45,pp.L54-L56,Jan.2006.(SCI,EI)Y.S.Lin,D.H.Huang,W.C.Hsu,T.B.Wang,R.T.Hsu,andY.H.Wu,“n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaPcamel-gatehigh-electronmobilitytransistors,”ElectrochemicalandSolidStateLetters,vol.9,pp.G37-G39,Dec.2006.(SCI,EI)J.C.Huang,W.C.Hsu,C.S.Lee,Y.J.Chen,D.H.Huang,andH.H.Chen,“Investigationsofdelta-dopedInAlAs/InGaAs/InPhigh-electron-mobilitytransistorswithlinearlygradedInxGa1-xAschannel,”Jpn.J.Appl.Phys.,vol.44,pp.8305-8308,Dec.2005.(SCI,EI)C.S.Lee,H.H.Chen,J.C.Huang,W.C.Hsu,andY.J.Chen,“Investigationsofdelta-dopedIn0.52Al0.48As/InxGa1-xAs/InPHEMTswithdifferentchannelstructures,”JournaloftheKoreanPhysicalSociety,vol.47,pp.1046-1052,Dec.2005.(SCI)I.L.Chen,W.C.Hsu,H.C.Kuo,H.C.Yu,C.P.Sung,C.M.Lu,C.H.Chiou,J.M.Wang,Y.H.Chang,T.D.Lee,andJ.S.Wang,“Low-threshold-current-density,long-wavelength,highlystrainedInGaAslasergrownbymetalorganicchemicalvapordeposition,”Jpn.J.Appl.Phys.,vol.44,pp.7485-7487,Oct.2005.(SCI,EI)Y.J.Chen,C.S.Lee,T.B.Wang,W.C.Hsu,Y.W.Chen,K.H.Su,andC.L.Wu,“ImprovedIn0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35AsInverseCompositeChannelMetamorphicHEMT,”Jpn.J.Appl.Phys.,vol.44,pp.5903-5908,Aug.2005.(SCI,EI)C.S.Lee,andW.C.Hsu,“Functionalcharacteristicsinasymmetricsource/drainInAlAsSb/InGaAs/InPdelta-dopedhighelectronmobilitytransistor,”Appl.Phys.Lett.,vol.86,pp.033505,Aug.2005.(SCI,EI)Y.J.Chen,C.S.Lee,T.B.Wang,W.C.Hsu,Y.W.Chen,K.H.Su,andC.LWu,“ImprovedIn0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35Asinversecompositechannelmetamorphichighelectronmobilitytransistor,”Jpn.J.Appl.Phys.,part1,vol.44,pp.5903-5908,Aug.2005.(SCI,EI)W.C.Hsu,Y.J.Chen,C.S.Lee,T.B.Wang,J.C.Huang,D.H.Huang,K.H.Su,Y.S.Lin,andC.L.Wu,“CharacteristicsofIn0.425Al0.575As/InxGa1-xAsMetamorphicHEMTswithPseudomorphicandSymmetrically-GradedChannels,”IEEETrans.ElectronDevices,vol.52,pp.1079-1086,Jun.2005.(SCI,EI)Y.J.Chen,W.C.Hsu,Y.W.Chen,Y.S.Lin,R.T.Hsu,andY.H.Wu,“InAlAs/InGaAsdopedchannelheterostructureforhigh-linearity,high-temperatureandhigh-breakdownoperations,”Solid-StateElectronic.,49,pp.163-166,Feb.2005.(SCI,EI)W.C.Hsu,Y.J.Chen,C.S.Lee,T.B.Wang,Y.S.Lin,andC.L.Wu,“High-temperaturethermalstabilityperformanceinδ-dopedIn0.425Al0.575As/In0.65Ga0.35AsmetamorphicHEMT,”IEEEElectronDeviceLett.,vol.26,pp.59-61,Feb.2005.(SCI,EI)C.S.Lee,W.C.Hsu,J.C.Huang,Y.J.Chen,andH.H.Chen,“MonolithicAlAs/InGaAs/InGaP/GaAsHeterostructureResonantTunnelingField-EffectTransistorswithPVCRof960at300K,”IEEEElectronDeviceLett.,vol.26,pp.50-52,Feb.2005.(SCI,EI)C.S.Lee,W.C.Hsu,W.L.Yang,Y.J.Chen,J.C.Huang,andH.H.Chen,“AnalyticModelingforCurrent-VoltageCharacteristicsandDrain-InducedBarrier-Lowering(DIBL)PhenomenonoftheInGaP/InGaAs/GaAsPDCFET,”JournaloftheKoreanPhysicalSociety,vol.45,pp.S513-S518,Dec.2004.(SCI)Y.J.Chen,W.C.Hsu,C.S.Lee,T.B.Wang,C.H.Tseng,J.C.Huang,D.H.Huang,andC.L.Wu,“Gate-alloy-relatedkinkeffectformetamorphichigh-electron-mobilitytransistors,”Appl.Phys.Lett.,vol.85,pp.5087-5089,Nov.2004.(SCI,EI)Y.S.Lin,W.C.Hsu,F.C.Jong,Y.Z.Chiou,Y.J.Chen,andJ.J.Tang,“Characteristicsofspike-freesingleanddoubleheterostructure-emitterbipolartransistors,”Jpn.J.Appl.Phys.,vol.43,pp.3285-3288,Part2,Jun.2004.(SCI,EI)Y.J.Li,W.C.Hsu,I.L.Chen,C.S.Lee,Y.J.Chen,andI.Lo,“ImprovedcharacteristicsofmetamorphicInAlAs/InGaAsHEMTwithsymmetricgradedInxGa1-xAschannel,”J.Vac.Sci.Technol.B,vol.22,p.2429,Oct.2004.(SCI,EI)S.J.Yu,W.C.Hsu,Y.J.Li,andY.J.Chen,“Improvedstep-graded-channelheterostructurefield-effecttransistor,”Jpn.J.Appl.Phys.,part1,vol.43,pp.5942-5944,Feb.2004.(SCI,EI)Y.W.Chen,Y.J.Chen,W.C.Hsu,R.T.Hsu,Y.H.Wu,andY.S.Lin,“Enhancement-modeIn0.52Al0.48As/In0.6Ga0.4AstunnelingrealspacetransferHEMT,”J.Vac.Sci.Technol.B,vol.22,p.p.974-976,Jun.2004.(SCI,EI)Y.W.Chen,W.C.Hsu,R.T.Hsu,Y.H.Wu,Y.J.Chen,andY.S.Lin,“CharacteristicsofIn0.52Al0.48As/InxGa1-xAsyP1-y/In0.52Al0.48Ashighelectron-mobilitytransistors,”J.Vac.Sci.Technol.B,vol.22,p.p.1044-1046,Jun.2004.(SCI,EI)I.L.Chen,W.C.Hsu,C.M.Lu,C.H.Chiou,Z.HongLee,andT.D.Lee,“CharacteristicsofGaAs-basedLong-wavelength,highlystrainedInGaAsQuantumWellVertical-cavityLaser,”Jpn.J.Appl.Phys.,vol.43,pp.L725-L727,Jun.2004.(SCI,EI)C.S.Lee,andW.C.Hsu,“Double-transconductance-plateaucharacteristicsinInGaAs/GaAsreal-spacetransferhigh-electron-mobilitytransistor”,Appl.Phys.Lett.,vol.84,pp.3618-3620,May.2004.(SCI,EI)Y.W.Chen,W.C.Hsu,R.T.Hsu,Y.H.Wu,andY.J.Chen,“CharacteristicsofIn0.52Al0.48As/InxGa1-xAsHEMT'swithvariousInxGa1-xAschannels,”Solid-StateElectronics,vol.48,pp.119-124,Jan.2004.(SCI,EI)Y.W.Chen,W.C.Hsu,R.T.Hsu,Y.H.Wu,andY.J.Chen,“LowdarkcurrentInGaAs(P)/InPp-i-nphotodiodes,”Jpn.J.Appl.Phys.,part1,vol.42,pp.4249-4252,Jul.2003.(SCI,EI)C.S.LeeandW.C.Hsu,“Off-StateBreakdownModelingforHigh-Schottky-Barrierδ-DopedIn0.49Ga0.51P/In0.25Ga0.75As/InPHighElectronMobilityTransistor,”Jpn.J.Appl.Phys.,part1,vol.42,pp.4253-4256,Jul.2003.(SCI,EI)Y.J.Li,W.C.Hsu,Y.W.Chen,andH.M.Shieh,“Depletion-andenhancement-modeIn0.49Ga0.51P/InGaAs/AlGaAsHEMTswithhighbreakdownvoltage,”J.Vac.Sci.Technol.B,vol.21,pp.981-983,Jun.2003.(SCI,EI)Y.J.Li,W.C.Hsu,andS.Y.Wang,“Temperature-dependentcharacteristicsofAl0.2Ga0.8As/In0.22Ga0.78Aspseudomorphicdoubleheterojunctionmodulationdopedfield-effecttransistorwithaGaAs/AlGaAssuperlatticebufferlayer,”J.Vac.Sci.Technol.B,vol.21,pp.760-762,Apr.2003.(SCI,EI)C.S.LeeandW.C.Hsu,“Bias-TunableMultiple-TransconductancewithImprovedTransportCharacteristicsofδ-dopedIn0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAsHighElectronMobilityTransistorUsingaGradedSuperlatticeSpacer,”Jpn.J.Appl.Phys.,part1,vol.42,pp.1545-1547,Apr.2003.(SCI,EI)Y.W.Chen,W.C.Hsu,R.T.Hsu,Y.H.Wu,Y.J.Chen,andL.S.Lin,“InvestigationofInGaP/GaAsheterojunctionbipolartransistorwithdopinggradedbase,”J.Vac.Sci.Technol.B,vol.21,pp.2555-2557,Dec.2003.(SCI,EI)C.S.Lee,W.C.Hsu,andC.L.Wu,“AnalyticModelingforDrain-InducedBarrierLowering(DIBL)PhenomenonoftheInGaP/InGaAs/GaAsPseudomorphicDopd-ChannelField-EffectTransistor,”Jpn.J.Appl.Phys.,part1,vol.41,pp.5919-5923,Sep.2002.(SCI,EI)Y.W.Chen,W.C.Hsu,H.M.Shieh,Y.J.Chen,Y.S.Lin,Y.J.Li,andT.B.Wang,“HighBreakdownCharacteristicd-dopedInGaP/InGaAs/AlGaAsTunnelingRealSpaceTransferHEMT,”IEEETrans.ElectronDevices,vol.49,pp.221-225,Feb.2002.(SCI,EI)W.C.Hsu,C.S.Lee,andY.S.Lin,“Characteristicsofd-dopedInPheterostructuresusingIn0.34Al0.66As0.85Sb0.15Schottkylayer,”JournalofAppliedPhysics,vol.91,pp.1385-1390,Feb.2002.(SCI,EI)C.S.LeeandW.C.Hsu,“Analyticmodelingforcurrent-voltagecharacteristicsofInGaP/InGaAs/GaAspseudomorphicdoped-channelfield-effecttransistors,”SuperlatticesandMicrostructures,vol.30,pp.145-158,Sep.2001.(SCI,EI)C.S.Lee,W.C.Hsu,S.S.Li,andP.Ho,“Adelta-dopedIn0.24Ga0.76As/GaAspseudomorphichighelectronmobilitytransistorusingagradedsuperlatticespacer,”SuperlatticesandMicrostructures,vol.29,pp.329-334,May2001.(SCI,EI)Y.J.Chen,Y.W.Chen,Y.S.Lin,C.Y.Yeh,Y.J.LiandW.C.Hsu,“AnImprovedIn0.34Al0.66As0.85Sb0.15/InPHeterostructureUtilizingCoupledd-DopingInPChannel,”Jpn.J.Appl.Phys.,vol.40,pp.L7-L9,Part2,Jan.2001.(SCI,EI)C.S.Lee,W.C.Hsu,Y.W.Chen,Y.C.Chen,andH.M.Shieh,“High-TemperatureBreakdownCharacteristicsofd-DopedIn0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAsHighElectronMobilityTransistor,”Jpn.J.Appl.Phys.,vol.39,pp.L1029-L1031,Part2,Oct.2000.(SCI,EI)C.S.Lee,W.C.Hsu,H.M.Shieh,J.S.Su,S.Y.Jain,andW.Lin,“Anoveldual-modeIn0.34Al0.66As.85Sb0.15/In0.75Ga0.25As/InPinvertedd-dopedheterostructurefield-effecttransistor,”Solid-StateElectronics,vol.44,pp.1635-1640,Sep.2000.(SCI,EI)Y.J.Li,J.S.Su,Y.S.Lin,andW.C.Hsu,“InvestigationofagradedchannelInGaAs/GaAsheterostructuretransistor,”SuperlatticesandMicrostructures,vol.28,pp.47-53,Jul.2000.(SCI,EI)Y.S.Lin,W.C.Hsu,H.M.Shieh,andC.Y.Yeh,“In0.34Al0.66As0.85Sb0.15/d(n+)-InPheterostructurefield-effecttransistors,”Appl.Phys.Lett.,vol.76,pp.3124-3126,May2000.(SCI,EI)Y.S.Lin,W.C.Hsu,andC.S.Yang,“LowleakagecurrentandhighbreakdownvoltageGaAs-basedheterostructurefieldeffecttransistorwithIn0.5(Al0.66Ga0.34)0.5PSchottkylayer,”Appl.Phys.Lett.,vol.75,pp.3551-3553,Nov.1999.(SCI,EI)Y.J.Li,H.M.Shieh,J.S.Su,M.J.Kao,andW.C.Hsu,“Improveddoubledelta-dopedInGaAs/GaAsheterostructureswithsymmetricgradedchannel,”MaterialsChemistryandPhysics,vol.61,pp.266-269,Nov.1999.(SCI,EI)Y.S.Lin,W.C.Hsu,C.H.Wu,W.Lin,andR.T.Hsu,“Highbreakdownvoltagesymmetricdoubledelta-dopedIn0.49Ga0.51P/In0.25Ga0.75As/GaAshighelectronmobilitytransistor,”Appl.Phys.Lett.,vol.75,pp.1616-1618,Sep.1999.(SCI,EI)Y.S.Lin,W.C.Hsu,S.Y.Lu,andW.Lin,“Animprovedheterojunction-emitterbipolartransistorusingdelta-dopedandspacerlayer,”MaterialsChemistryandPhysics,vol.59,pp.91-95,Apr.1999.(SCI,EI)J.S.Su,W.C.Hsu,W.Lin,andS.Y.Jain,“HighBreakdownCharacteristicsofTheInP-BasedHeterostructureField-EffectTransistorwithIn0.34Al0.66As0.85Sb0.15SchottkyLayer,”IEEEElectronDeviceLett.,vol.19,pp.195-197,Jun.1998.(SCI,EI)R.T.Hsu,Y.S.Lin,J.S.Su,W.C.Hsu,Y.H.Wu,andM.J.Kao,“Studyoftwo-dimensionalholegasconcentrationandholemobilityinzincdelta-dopedGaAsandpseudomorphicGaAs/In0.2Ga0.8Asheterostructures,”Superlattices&Microstructures,vol.24,pp.175-180,Aug.1998.(SCI,EI)Y.S.Lin,H.M.Shieh,W.C.Hsu,J.S.Su,J.Z.Huang,Y.H.Wu,andS.D.Ho,“Electricalcharacteristicsofheterostructure-emitterbipolartransistorsusingspacerslayers,”J.Vac.Sci.Technol.B,vol.16,pp.958-961,Jun.1998.(SCI,EI)J.S.Su,W.C.Hsu,W.Lin,andY.S.Lin,“Enhancedreal-spacetransferindelta-dopedGaAs/In0.1Ga0.9As/In0.25Ga0.75Astwo-stepchannelheterojunctions,”J.Appl.Phys.,vol.82,pp.4076-4080,Oct.1997.(SCI,EI)Y.S.Lin,Y.H.Wu,J.S.Su,W.C.Hsu,S.D.HoandW.Lin,“AnImprovedIn0.5Ga0.5AsDoubleHeteostructure-EmitterBipolarTransistorUsingEmitterEdge-ThinningTechnique,”Jpn.J.Appl.Phys.,vol.36,pp.2007-2009,Apr.1997.(SCI,EI)J.S.Su,W.C.Hsu,Y.S.Lin,andW.Lin,“ControllableDrainCut-inVoltagewithStrongNegativeDifferentialResistanceinGaAs/InGaAsReal-SpaceTransferHeterostructure,”Appl.Phys.Lett.,vol.70,pp.1002-1004,Feb.1997.(SCI,EI)J.S.Su,W.C.Hsu,D.T.Lin,W.Lin,H.P.Shiao,Y.S.Lin,J.Z.Huang,andP.J.Chou,“High-breakdownvoltageAl0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InPheterostructurefield-effecttransistors,”ElectronicsLett.,vol.32,pp.2095-2097,Oct.1996.(SCI,EI)M.J.Kao,H.M.Shieh,W.C.Hsu,T.Y.Lin,Y.H.Wu,andR.T.Hsu,“Investigationoftheelectrontransfercharacteristicsinmulti-delta-dopedGaAsFET's,”IEEETrans.ElectronDevices,vol.43,pp.1181-1186,Aug.1996.(SCI,EI)I.Lo,M.J.Kao,W.C.Hsu,K.K.Kuo,Y.C.Chang,H.M.Weng,J.C.Chiang,andF.Tsay,“Photo-inducedelectroncouplingindelta-dopingGaAs/InGaAsquantumwells,”PhysicalReviewB,vol.54,pp.4774-4779,Aug.1996.(SCI,EI)R.T.Hsu,W.C.Hsu,J.S.Wang,M.J.Kao,Y.H.Wu,andJ.S.Su,“Studyofzinc-delta-dopedstrainedquantumwellInGaAs/GaAsp-channelheterostructurefield-effecttransistors,”Jpn.J.Appl.Phys.,part1,vol.35,pp.13-17,Apr.1996.(SCI,EI)J.S.Su,W.C.Hsu,Y.S.Lin,W.Lin,C.L.Wu,M.S.Tsai,andY.H.Wu,“AnovelInAlAs/InGaAstwo-terminalreal-spacetransferdiode,”IEEEElectronDeviceLett.,vol.17,pp.43-45,Feb.1996.(SCI,EI)L.W.Laih,W.C.Liu,J.H.Tsai,W.C.Hsu,Y.T.Ting,andR.C.Liu,“Anomalousnegative-differential-resistance(NDR)characteristicsofn+-GaAs/n--GaAs/n-In0.2Ga0.8As/i-GaAsstructure,”Superlattices&Microstructures,vol.20,pp.7-13,Jun.1996.(SCI,EI)C.L.WuandW.C.Hsu,“Enhancedresonanttunnelingreal-spacetransferindelta-dopedGaAs/InGaAsgateddual-channeltransistorsgrownbyMOCVD,”IEEETrans.ElectronDevices,vol.43,pp.207-212,Feb.1996.(SCI,EI)C.L.Wu,W.C.Hsu,H.M.Shieh,andM.J.Kao,“Depletion-MIS-likeInGaAs/GaAsdelta-dopedstructureswithhighbreakdownvoltageandlargegatevoltageswing,”Solid-StateElectron.,vol.38,pp.433-436,Feb.1995.(SCI,EI)Y.H.Wu,J.S.Su,W.C.Hsu,W.Lin,W.C.Liu,M.J.Kao,andR.T.Hsu,“Emitteredge-thinningeffectonInGaAs/InPdouble-heterostructure-emitterbipolartransistor,”Jpn.J.Appl.Phys.,part1,vol.34,pp.5908-5911,Nov.1995.(SCI,EI)Y.H.Wu,J.S.Su,W.C.Hsu,W.C.Liu,andW.Lin,“Electricalcharacteristicsofalattice-matchedIn0.53Al0.22Ga0.25As/InPheterojunctionbipolartransistorwithzeropotentialspikeatemitter-baseheterojunction,”Solid-StateElectron.,vol.38,pp.1755-1757,Oct.1995.(SCI,EI)L.W.Laih,J.H.Tsai,W.C.Liu,W.C.Hsu,andW.S.Lour,“InvestigationofanInGaAs-GaAsDoped-channelMIS-likepseudomorphictransistor,”Solid-StateElection.,vol.38,pp.1747-1753,Oct.1995.(SCI,EI)W.C.Liu,L.W.Laih,J.H.Tsai,W.C.Hsu,C.Z.Wu,K.B.Thei,andW.S.Lour,“Observationoftheanomalouscurrent-voltagecharacteristicsofGaAs/n(+)-InGaAs/GaAsdoped-channelstructure,”Appl.Phys.Lett.,vol.67,pp.404-406,Jul.1995.(SCI,EI)M.J.Kao,W.C.Hsu,H.M.Shieh,andT.Y.Lin,“Improvedmobilitiesandconcentrationsindouble-quantum-wellInGaAs/GaAspseudomorphicHFETsusingmulti-coupledGaAs,”Solid-StateElection.,vol.38,pp.1171-1173,Jun.1995.(SCI,EI)M.J.Kao,W.C.Hsu,R.T.Hsu,Y.H.Wu,T.Y.Lin,andC.Y.Chang,“Characteristicsofagraded-likemulti-delta-dopedGaAsfield-effecttransistor,”Appl.Phys.Lett.,vol.66,pp.2505-2506,May1995.(SCI,EI)W.C.Hsu,C.L.Wu,M.S.Tsai,C.Y.Chang,W.C.Liu,andH.M.Shieh,“Characterizationofhighperformanceinverteddelta-modulation-doped(IDMD)GaAs/InGaAspseudomorphicheterostructureFET's,”IEEETrans.ElectronDevices,vol.42,pp.804-809,May1995.(SCI,EI)R.T.Hsu,W.C.Hsu,M.J.Kao,Y.H.Wu,andJ.S.Wang,“Characteristicsofadelta-dopedGaAs/InGaAsp-channelheterostructurefield-effecttransistor,”Appl.Phys.Lett.,vol.66,pp.2864-2866,May1995.(SCI,EI)Y.H.Wu,J.S.Su,W.C.Hsu,W.C.Liu,andW.Lin,“CharacteristicsofIn0.53Ga0.47As/InPdoubleandsingleheterostructure-emitterbipolartransistorsgrownbyLP-MOCVD,”Solid-StateElectron.,vol.38,pp.767-769,Apr.1995.(SCI,EI)C.L.Wu,W.C.Hsu,H.M.Shieh,andM.S.Tsai,“Anoveldelta-dopedGaAs/InGaAsreal-spacetransfertransistorwithhighpeak-to-valleyratioandhighcurrentdrivingcapability,”IEEEElectronDeviceLett.,vol.16,pp.112-114,Mar.1995.(SCI,EI)R.T.Hsu,M.J.Kao,J.S.Wang,andW.C.Hsu,“Characteristicsofdelta-dopedInGaAs/GaAspseudomorphicdouble-quantum-wellhighelectronmobilitytransistors,”J.Vac.Sci.Technol.B,vol.13,pp.273-275,Apr.1995.(SCI,EI)W.C.Liu,W.C.Hsu,L.W.Laih,J.H.Tsai,andW.S.Lour,“Performanceenhancementinametal-insulator-semiconductor-likepseudomorphictransistorbyutilizingann--GaAs/n+-In(0.2)Ga(0.8)Astwo-layerstructure,”Appl.Phys.Lett.,vol.66,pp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hperformancedoubledeltadopingGaAs/In0.25Ga0.75As/GaAspseudomorphicheterostructure,”Jpn.J.Appl.Phys.,vol.32,pp.L303-305,Mar.1993.(SCI,EI)W.C.Hsu,W.C.Liu,D.F.Kuo,andW.S.Lour,“GaAs-InGaAsdoubledelta-dopedquantum-wellswitchingdevicepreparedbymolecularbeamepitaxy,”Appl.Phys.Lett.,vol.62,pp.1504-1506,Mar.1993.(SCI,EI)W.C.HsuandH.M.Shieh,“Adelta-dopedIn(0.37)Ga(0.63)As/GaAshighelectronmobilitytransistorpreparedbylow-pressureMOCVD,”Solid-StateElectron.,vol.35,pp.635-638,May1992.(SCI,EI)H.M.Shieh,T.S.Wu,andW.C.Hsu,“SiH4-dopedAlGaAsepilayersformedbyMOCVD,”J.Cryst.Growth,vol.121,pp.665-670,Aug.1992.(SCI,EI)W.C.Hsu,S.Z.Chang,andW.Lin,“AStudyofLayerThicknessandInterfaceQualitiesofStrainedInxGa1-xAs/GaAsLayers,”Jpn.J.Appl.Phys.,vol.31,pp.26-29,Jan.1992.(SCI,EI)W.C.Hsu,C.M.ChenandW.Lin,“Variationofthemobilityandthe2DEGconcentrationindelta-dopedGaAs/In(x)Ga(1-x)As/GaAsstructures,”J.Appl.Phys.,vol.70,pp.4332-4335,Oct.1991.(SCI,EI)W.C.Hsu,C.M.Chen,andR.T.Hsu,“Adalta-dopedGaAs/gradedIn(x)Ga(1-x)As/GaAspesudomorphicstructurebylow-pressuremetalorganicchemicalvapordeposition,”Appl.Phys.Lett.,vol.59,pp.1075-1077,Aug.1991.(SCI,EI)C.Y.Chang,W.Lin,W.C.Hsu,T.S.Wu,S.Z.Chang,andC.Wang,“Thedelta-dopedIn0.25Ga0.75Aspseudomorphichighelectronmobilitytransistorstructurespreparedbylow-pressuremetalorganicchemicalvapordeposition,”Jpn.J.Appl.Phys.,vol.30,pp.1158-1163,Jun.1991.(SCI,EI)W.C.Hsu,W.Lin,andC.Wang,“Aquatumwelldelta-dopedGaAsFETfabricatedbylow-pressuremetalorganicchemicalvapordeposition,”Solid-StateElectron.,vol.34,pp.649-653,Jun.1991.(SCI,EI)W.Lin,W.C.Hsu,T.S.Wu,S.Z.Chang,C.Wang,andC.Y.Chang,“Two-dimensionalelectrongasesIn(0.25)Ga(0.75)As/GaAsheterostructure,”Appl.Phys.Lett.,vol.58,pp.2681-2683,Jun.1991.(SCI,EI)W.C.Liu,W.S.Lour,C.Y.Sun,R.L.Wang,andW.C.Hsu,“Studyonberyllium-dopedAlxGa1-xAslayersgrownbymolecularbeamepitaxy,”MaterialsScience&EngineeringB:Solid-StateMaterialsforAdvancedTechnology,vol.6,pp.43-48,May1990.(SCI)W.C.Liu,W.C.Hsu,W.S.Lour,R.L.Wang,andC.Y.Chang,“MBEgrownundopedsuperlatticegateandmodulation-dopedbufferstructureforpowerFETapplications,”JapaneseJournalofAppliedPhysics,Part2:Letters,vol.28,pp.L904-L906,Jun.1989.(SCI,EI)W.C.Liu,C.Y.Chang,W.C.Hsu,W.S.Lour,andR.L.Wang,“SUPERLATTICEGATEANDGRADEDSUPERLATTICEBUFFERFORMICROWAVE-POWERMETAL-SEMICONDUCTORFIELD-EFFECTTRANSISTORGROWNBYMOLECULAR-BEAMEPITAXY,”JOURNALOFVACUUMSCIENCE&TECHNOLOGYB,vol.7,pp.589-592,Aug.1989.(SCI,EI)W.Lin,M.D.Lei,C.Y.Chang,W.C.Hsu,L.B.Di,andF.Kai,“ThedopedquantumwellgateFETfabricatedbylow-pressureMOCVD,”JapaneseJournalofAppliedPhysics,Part2:Letters,vol.27,pp.2431-2433,Dec.1988.(SCI,EI)W.C.Hsu,C.Y.Chang,S.S.Hau,andS.J.Wang,“ObservationofBias-DependentCapture-EmissionProcessesinMBE-grownGaAsLayers,”Solid-StateElectronics,vol.30,pp.221-226,Feb.1987.(SCI,EI)Y.C.Chang,W.C.Hsu,C.M.Uang,Y.K.Fang,W.C.Liu,andB.S.Wu,“PersonalComputer-BasedAutomaticMeasurementSystemApplicabletoDeep-LevelTransientSpectroscopy,”ReviewofScientificInstruments,vol.55,pp.637-639,Dec.1984.(SCI,EI)Y.C.Chang,W.C.Hsu,C.M.Uang,Y.K.Fang,andW.C.Liu,“AsimpleandLow-CostPersonalComputer-BasedAutomaticDeep-LevelTransientSpectroscopySystemforSemiconductorDevicesAnalysis,”IEEETrans.Instrum.Meas.,vol.33,pp.259-263,Dec.1984,(SCI)W.C.Liu,C.Y.Chang,W.C.Hsu,Y.K.Fang,B.S.Wu,andR.C.Liu,“TheV-grooveTechniqueintheFabricationofHigh-VoltageJunctionDevices,”InternationalJournalofElectronics,vol.55,pp.417-424,1983.(SCI,EI)C.Y.Chang,M.K.Lee,Y.K.Su,andW.C.Hsu,“EnhancementofGrowthRateduetoTinDopinginGaAsEpilayerGrownbyLowPressureMetal-OrganicChemicalVaporDeposition,”JournalofAppliedPhysics,vol.54,pp.5464-5465,1983.(SCI,EI)Y.C.Chang,W.C.Hsu,T.Y.Chen,W.C.Liu,Y.K.Fang,andR.M.Chen,“TheAnalysisofExponentialTransientsinDeepLevelPeriodicTransientSpectroscopy,”ElectrochemicalSocietyExtendedAbstracts,vol.82,pp.369-370,1982.Y.C.Chang,W.C.Liu,W.C.Hsu,Y.K.Fang,andR.C.Liu,“DepletionLayerCharacteristicsNeartheSurfaceofV-groovedHighVoltageP-NJunction,”ElectrochemicalSocietyExtendedAbstracts,vol.82,p.372,1982.C.Y.Chang,Y.K.Fang,B.S.Wu,S.R.Wang,W.C.Hsu,andW.C.Liu,“AnMISSolarCellMadeonPlasmaHydrogenatedPolycrystallineSilicon,”TheElectrochemicalSociety,vol.82,pp.372-376,1982.C.Y.Chang,W.C.Liu,W.C.Hsu,andY.K.Fang,“ANewTechniqueforHigh-VoltageDevices,”J.Electrochem.Society,vol.129,pp.C103-C103,1982.(SCI,EI)C.Y.Chang,Y.K.Fang,W.L.Lin,andW.C.Hsu,“TheMobilityandLifetimeofInjectedHolesandElectronsinA-Si-HThinfilms,”J.Electrochem.Society,vol.128,pp.C95-C95,1981.(SCI,EI) 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W.C.Hsu,C.S.Lee,H.Y.Liu,"ImprovedNon-IdealEffectsinAlGaN/GaN-BasedIon-SensitiveField-EffectTransistors,"Conf.18thInternationalConferenceonEnergyScienceandEngineering(ICESE),27-28Jun.2016Y.C.Huang,M.H.Chiang,W.C.Hsu,S.Y.Cheng,“6-TSRAMperformanceassessmentwithstackedsiliconnanowireMOSFETs,”Conf.SixteenthInternationalSymposiumonQualityElectronicDesign(ISQED),2-4March2015.Y.B.Liao,M.H.Chiang,andW.C.Hsu,“Performanceevaluationofstackedgate-all-aroundMOSFETs,”Conf.onEUROSOI2014,Tarragona,Spain,27-29Jan.2014.W.H.Chung,C.L.Yang,C.C.Yeh,B.Y.Chou,H.Y.Liu,H.S.Huang,T.T.Wu,W.C.Hsu,andC.S.Lee,“High-TemperatureCharacteristicsofAlGaN/AlN/GaNMOS-HEMTbyUsingOzoneWaterOxidationTechnique,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Nantao,Taiwan,28-29Nov.2013.Y.N.Lai,W.F.Lai,E.P.Yao,W.C.Hsu,M.H.Cheng,andC.S.Ho,“WhiteEmissionGeneratedbyUsingFlexibleBlueOrganicEmitterDiodesIncorporatingColor-ConversionLayers,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Nantao,Taiwan,28-29Nov.2013.H.Y.Liu,W.C.Hsu,B.Y.Chou,C.S.Lee,Y.B.Liao,C.S.Ho,andY.H.Wang,“ImprovedThermalStabilityandThermalModelAnalysisofAlGaN/GaNHEMTandMOS-HEMTFabricatedbyHydrogenPeroxideOxidationTechnique,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Nantao,Taiwan,28-29Nov.2013.Y.B.Liao,M.H.Chiang,andW.C.Hsu,“PerformanceBenchmarkingforVariousBulkFinFETs,”2013InternationalElectronDevicesandMaterialsSymposia(IEDMS),Nantao,Taiwan,28-29Nov.2013.B.Y.Chou,W.C.Hsu,H.Y.Liu,C.S.Lee,W.C.Ou,andY.S.Wu,“FabricationofSi3N4-PassivatedT-GateAlGaN/GaNHEMTswithGate-LengthReductionbyaTwo-StepGatePhotolithographyProcess”2013IEEENanotechnologyMaterialsandDevicesConference(NMDC),Tainan,Taiwan,6-9Oct.2013.(oral)E.P.Yao,Y.N.Lai,W.C.Hsu,K.H.Jou,“TheInfluenceofPoly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]FilmsTreatedbyLow-PowerLaser”2013IEEENanotechnologyMaterialsandDevicesConference(NMDC),Tainan,Taiwan,6-9Oct.2013.B.Y.Chou,Y.S.Wu,EL.Huang,W.F.Chen,H.Y.Liu,W.C.Hsu,C.S.Lee,W.C.Ou,andC.S.Ho,“ADevicePerformanceStudyofStackedGateDielectricsAlGaN/GaNMOS-HEMTsbyMixedOxideThinFilmGrowthTechniques,”InternationalConferenceonSolidStateDevicesandMaterials(SSDM),Fukuoka,Japan,24-27Sep.2013.EL.Huang,W.F.Chen,W.C.Hsu,J.C.Chou,C.S.Ho,E.P.Yao,H.W.Liu,andY.C.Kao,“EffectsofPoly(3-hexylthiophene)ConcentrationonPerformanceofExtended-GateField-EffectTransistorforSilverIonDetection,”InternationalConferenceonSolidStateDevicesandMaterials(SSDM),Fukuoka,Japan,24-27Sep.2013.H.Y.Liu,W.C.Hsu,B.Y.Chou,C.S.Lee,C.F.Yang,C.S.Ho,E.L.Huang,andW.C.Ou,“ACost-EffectiveSurfacePassivationTechniqueonGaN-basedHeterostructureField-EffectTransistorsandtheEnhancementofRFPowerPerformances”InternationalConferenceonAdvancedComplexInorganicNanomaterials(ACIN),Namur,Belgium,15-19Jul.2013.B.Y.Chou,W.C.Hsu,H.Y.Liu,C.S.Ho,C.S.Lee,andC.F.Yang,“TheDCCharacteristicsofMOS-HEMTswithAl2O3/HfO2StackedDielectricsbyUsingH2O2OxidationandSputteringTechniques”InternationalConferenceonAdvancedComplexInorganicNanomaterials(ACIN),Namur,Belgium,15-19Jul.2013.E.P.Yao,W.C.Hsu,H.W.Liu,Y.NLai,C.S.Lee,C.S.Ho,C.W.Wang,andW.F.Lai,"TheInfluenceofNPB-dopedMEH-PPVFilmonPerformanceofPolymer-basedLight-emittingDiodes,"InternationalElectronDevicesandMaterialsSymposia(IEDMS),I-ShouUniversity,Taiwan,28-29Nov.2012.W.C.Hsu,H.Y.Liu,W.C.Ou,B.Y.Chou,C.S.Lee,andC.S.Ho,"EnhancedAlGaN/GaNMOS-HEMTPerformanceUsingAluminumOxideforSurfacePassivationandGateDielectric,"InternationalElectronDevicesandMaterialsSymposia(IEDMS),I-ShouUniversity,Taiwan,28-29Nov.2012.F.C.Liao,W.F.Lai,J.T.Hung,C.S.Ho,B.Y.Chou,H.Y.Liu,C.L.Yang,C.C.Yeh,W.C.Hsu,andC.S.Lee,"AlGaAs/InGaAspHEMTsPassivatedbyUsingOzoneWaterOxidation,"InternationalElectronDevicesandMaterialsSymposia(IEDMS),I-ShouUniversity,Taiwan,28-29Nov.2012.C.S.Ho,W.C.Hsu,Ying-NanLai,E-LingHuang,En-PingYao,W.M.Chen,C.S.Lee,C.W.Wang“InfluenceofAbsorptionPropertybyDoping/insertingC545TinPolymerSolarCell”,InternationalConferenceonSolidStateDevicesandMaterials(SSDM),Sep25-27,2012,KyotoInternationalConferenceCenter,JapanE.L.Huang,Y.C.Kao,W.C.Hsu,J.C.Chou,H.Y.Liu,C.S.Ho,B.Y.Chou,En-PingYao,andY.N.Lai“Extended-gatefield-effecttransistorbasedonPoly(3-hexylthiophene)forselectivesilverionsensor”,EuropeanMaterialsResearchSociety(E-MRS),Strasbourg,France,14-18May2012.H.Y.Liu,W.C.Hsu,B.Y.Chou,K.H.Lee,E.L.Huang,C.S.Lee,C.S.Ho,E.P.Yao,andC.M.Tsai,“InvestigationtoAlGaN/GaNHighElectronMobilityTransistorOxide-PassivatedbyUsingHydrogenPeroxide”,EuropeanMaterialsResearchSociety(E-MRS),Strasbourg,France,14-18May2012.H.Y.Liu,K.H.Lee,W.C.Hsu,B.Y.Chou,E.L.Huang,C.S.Lee,C.S.Ho,E.P.Yao,andC.M.Tsai,“ANovelGateDimensionShrinkingMethodbyNitricAcidSelectiveEtchinginAlGaN/GaNHighElectronMobilityTransistor”,EuropeanMaterialsResearchSociety(E-MRS),Strasbourg,France,14-18May2012.M.Y.Lin,L.Y.Tseng,Y.H.Liao,C.S.Ho,B.Y.Chou,H.Y.Liu,Y.N.Lai,EL.Huang,Y.B.Liao,E.P.Yao,F.C.Liao,W.F.Lai,W.-C.Hsu“AlGaAs/InGaAsMOS-pHEMTswithDifferentShifted-GateStructure”,InternationalElectronDevicesandMaterialsSymposium(IEDMS),Nov17-18,2011,NationalTaiwanUniversityofScienceandTechnology,Taipei,Taiwan.M.H.Hsu,C.W.Wang,W.C.Hsu,T.K.Hsu,J.H.Wu“Anoptimalstructuraldesignforstackablepiezoelectricpowergenerationdeviceusingmicropowerenergystoragemethod”,InternationalElectronDevicesandMaterialsSymposium(IEDMS),Nov17-18,2011,NationalTaiwanUniversityofScienceandTechnology,Taipei,Taiwan.C.Y.Ou,C.W.Wang,W.C.Hsu,H.Y.Tan“AnoptimalPWMdimmingcontroldesignforLEDlampapplicationswithstablepowerfactor”,InternationalElectronDevicesandMaterialsSymposium(IEDMS),Nov17-18,2011,NationalTaiwanUniversityofScienceandTechnology,Taipei,Taiwan.W.C.Hsu,H.Y.Liu,B.Y.Chou,C.S.Lee,C.S.Ho,C.C.Hsu,J.K.Sheu,“GateLengthShrinkingbyHydrochloricAcidSelectiveEtchinginAu/ITOStackGateHighElectronMobilityTransistors”,InternationalElectronDevicesandMaterialsSymposium(IEDMS),Nov17-18,2011,NationalTaiwanUniversityofScienceandTechnology,Taipei,Taiwan.C.S.Ho,W.C.Hsu,Y.N.Lai,E.L.Huang,E.P.Yao,W.M.Chen,B.Y.Chou,H.Y.Liu,C.S.Lee,“TheEnhancementinLight-absorptionforPolymerSolarCellbyaddingFluorescentDopant”,InternationalElectronDevicesandMaterialsSymposium(IEDMS),Nov17-18,2011,NationalTaiwanUniversityofScienceandTechnology,Taipei,Taiwan.Y.-B.Liao,M.-H.Chiang,W.-C.Hsu,andY.-S.Lai,“LeakageSuppressionTechniqueforBulkFinFETs,”2011SymposiumonNanoDeviceTechnology(2011SNDT),HsinchuTaiwan.Y.-B.Liao,W.-C.Hsu,M.-H.Chaing,H.Li,C.-L.Lin,andY.-S.Lai,“OptimaldevicedesignofFinFETsonabulksubstrate,”2011IEEEInternationalConferenceonNanoelectronics(2011INEC),ChangGungUniversity,Tao-Yuan,Taiwan,pp.1-2.Y.-B.Liao,M.-H.Chiang,K.Kim,andW.-C.Hsu,“VariabilitystudyforsiliconnanowireFETs,”2011NanotechnologyConferenceandExpo,Boston,MAHynesConventionCenterUSA,vol.2,pp.46-49.Y.-B.Liao,M.-H.Chiang,W.-C.Hsu,Y.-S.Lai,andH.Li,“StackGateTechniqueforFeasibleBulkFinFETs,”2011InternationalConferenceonSolidStateDevicesandMaterials,AichiIndustryandLaborCenter,Nagoya,Japan,2011,P-3-13.E.P.Yao,W.C.Hsu,C.S.Ho,Y.Chang,E.L.Huang,C.S.Lee,S.J.Wu,andY.S.Wang,“TheTrapsStudyofOrganicLight-EmittingDiodewithDopedHoleTransportingLayer,”EuropeanMaterialsResearchSociety(E-MRS),Nice,France,2011.Y.Chang,W.C.Hsu,C.S.Ho,E.P.Yao,E.L.Huang,C.S.Lee,andS.J.Wu,“StudyofImprovedEfficiencybyAnodeOxidationTechniqueinHighColorPurityofTop-EmissionWhiteOrganicLightEmittingDiode,”EuropeanMaterialsResearchSociety(E-MRS),Nice,France,2011.C.S.Ho,W.C.Hsu,C.S.Lee,C.C.Chen,E.P.Yao,andY.Chang,“TheTrapsStudyofThermal-treatedFullerenebyCharge-basedDeepLevelTransientSpectroscopy,”InternationalConferenceonOpticsandPhotonicsinTaiwan(OPT10),SouthernTaiwanUniversity,Tainan,Taiwan,OPT-9-P-110,2010.C.S.Ho,W.C.Hsu,C.S.Lee,C.W.Wang,Y.Y.Tsai,Y.N.Lai,andW.F.Lai,“TheTrapsStudyofDopedHoleTransportingLayerinOrganicLight-EmittingDiode,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCentralUniversity,Tao-Yuan,Taiwan,P-C-27,2010.W.C.Hsu,B.Y.Chou,C.S.Lee,C.S.Ho,Y.N.Lai,Y.C.Liu,H.Y.Liu,J.T.Hung,andM.Y.Lin,“GateLengthShirkingbyH2O2TreatmentinAlGaN/GaNHEMTs,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCentralUniversity,Tao-Yuan,Taiwan,P-C-20,2010.C.S.Ho,E.L.Huang,W.C.Hsu,C.S.Lee,Y.NLai,andW.H.Lai“AnnealingEffectsonPolymerSolarCellswithHighPolythiophene-fullereneConcentrations,”2010InternationalConferenceonSolidStateDevicesandMaterials(2010SSDM),TokyoUnversity,Japan,P-10-11,2010.C.S.Lee,B.Y.Chou,W.C.Hsu,S.Y.Chu,D.Y.Lin,C.S.Ho,Y.N.Lai,S.H.Yang,andW.T.Chien,“OpticalSensingCharacteristicsinaTransparentAl-DopedZincOxide-GatedAl0.2Ga0.8As/In0.2Ga0.8AsHighElectronMobilityTransistor,”InternationalSymposiumonPhotonicsandOptoelectronics(SOPO2010),Chengdu,China,60243,2010.C.S.Ho,W.C.Hsu,K.H.Hsiao,Y.N.Lai,P.Y.Chou,A.Y.Kao,C.S.Lee,andC.Y.Lin,“EfficiencyImprovementofOrganicSolarCellwithMetalAnodebyUsingWetOxidation,”InternationalSymposiumonPhotonicsandOptoelectronics(SOPO2010),Chengdu,China,60300,2010.Y.N.Lai,W.C.Hsu,C.S.Lee,C.W.Wang,T.Y.Lu,C.S.Ho,andW.F.Lai,“HighEfficiencyTopemissionOrganicLightemittingDiode,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Chang-GungUniversity,Tao-Yuan,Taiwan,R.O.C.,GD-01,2009.C.S.Ho,W.C.Hsu,C.S.Lee,K.H.Hsiao,Y.N.Lai,andW.H.Lai,“EfficiencyImprovementofOrganicSolarCellwithMetalAnodebyO2PlasmaModification,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Chang-GungUniversity,Tao-Yuan,Taiwan,R.O.C.,GD-48,2009.A.Y.Kao,C.S.Lee,W.C.Hsu,B.Y.Chou,C.S.Ho,Y.N.Lai,P.C.Yang,S.H.Yang,andW.T.Chien,“InvestigationsonAlGaN/GaNHighElectronMobilityTransistors,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),Chang-GungUniversity,Tao-Yuan,Taiwan,R.O.C.,GB-37,2009.Y.N.Lai,W.C.Hsu,C.S.Lee,C.W.Wang,T.Y.Lu,C.S.Ho,andW.F.Lai1,“HighEfficiencyTop-emissionOrganicLight-EmittingDiodes,”2009InternationalConferenceonSolidStateDevicesandMaterials(2009SSDM),Sendai,Japan,pp.1180-1181,2009.C.S.Ho,W.C.Hsu,C.S.Lee,K.H.Hsiao,andW.H.Lai,“SingleDonor-AcceptorHeterojunctionOrganicPhotovoltaicCellwithanAgO-BasedAnode,”2009InternationalConferenceonSolidStateDevicesandMaterials(2009SSDM),Sendai,Japan,pp.116-117,2009.A.Y.Kao,C.S.Ho,W.C.Hsu,Y.N.Lai,andC.S.Lee,“ImprovedCharacteristicsofInAlAs/InGaAsMOS-MHEMTsbyUsingOzoneWaterOxidationMethod,”2009InternationalConferenceonSolidStateDevicesandMaterials(2009SSDM),Sendai,Japan,pp.498-499,2009.B.Y.Chou,C.S.Lee,W.C.Hsu,S.Y.Chu,Y.N.Lai,C.S.Ho,Z.L.Tseng,andM.F.Shih,“TransparentAZO-GatedDoubleδ-DopedAlGaAs/InGaAsHEMTs,”2009InternationalConferenceonSolidStateDevicesandMaterials(2009SSDM),Sendai,Japan,pp.502-503,2009.C.S.Ho,C.S.Lee,Y.N.Lai,W.C.Hsu,B.I.Chou,A.Y.Kao,andY.C.Liu,“Improved(NH4)2Sx-PassivatedIn0.2Ga0.8AsSb/GaAsHeterostructureField-EffectTransistor,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalChung-HsingUniversity,Taichung,Taiwan,R.O.C.,B.352,2008.Y.N.Lai,W.C.Hsu,C.S.Lee,C.S.Ho,I.C.Chen,W.F.Lai,andW.H.Lai,“EnhancedShort-CircuitCurrentDensityofOrganicSolarCellswiththeDonor-AcceptorHeterojunction,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalChung-HsingUniversity,Taichung,Taiwan,R.O.C.,E.390,2008.W.C.Hsu,Y.N.Lai,C.S.Lee,S.W.Yeh,W.F.Lai,andW.H.Lai,“ImprovedWhiteOrganicLight-EmittingDeviceswithDual-Emission-LayerDesign,”9thInternationalConferenceonSolid-StateandIntegrated-CircuitTechnology(ICSICT),D6.6,Beijing,China,2008.C.S.Lee,C.S.Ho,W.C.Hsu,K.H.Su,P.C.Yang,B.I.Chou,andA.Y.Kao,“InvestigationsonIn0.2Ga0.8AsSb/GaAsHighElectronMobilityTransistorswithGatePassivations,”9thInternationalConferenceonSolid-StateandIntegrated-CircuitTechnology(ICSICT),E1.11,Beijing,China,2008.Y.N.Lai,W.C.Hsu,S.W.Yeh,C.W.Wang,W.F.Lai,andW.H.Lai,“Enhancementofefficiencyinwhiteorganiclight-emittingdiodebymodifyingemissionlayer,”2008TaiwanDisplayConference,Taipei,Taiwan,R.O.C.,2008.Y.N.Lai,W.C.Hsu,C.W.Wang,L.Tsou,W.F.Lai,W.H.Lai,“Ahighefficiencyandcolorpuritywhiteorganiclight-emittingdiode,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalTsing-HuaUniversity,Hsinchu,Taiwan,R.O.C.,2007.T.B.Wang,W.C.Hsu,I.L.Chen,T.D.Lee,K.H.Su,P.D.Yang,andC.H.Chiou,“SinglemodeInGaAsphotoniccrystalvertical-cavitysurface-emittinglasersemittingat1170nm,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCheng-KungUniversity,Taiwan,R.O.C.,p.69,2006.J.R.HuangandW.C.Hsu,“Remarkablehydrogen-sensingcharacteristicsofaPd/GaNSchottkydiode,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCheng-KungUniversity,Taiwan,R.O.C.,p.50,2006.W.C.Hsu,D.H.Huang,Y.S.Lin,J.C.Huang,andY.K.Liao,“Thermalstabilityinmetamorphichigh-electron-mobilitytransistorwithtensile-strainedV-shapedchannel,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCheng-KungUniversity,Taiwan,R.O.C.,p.40,2006.J.C.Huang,W.C.Hsu,C.S.Lee,D.H.Huang,andY.C.Yang,“PowerperformanceofIn0.425Al0.575As/In0.425Ga0.575AsMHEMTwithdifferentdraincurrentanddrainvoltage,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCheng-KungUniversity,Taiwan,R.O.C.,p.67,2006.C.S.Lee,W.C.Hsu,K.H.Su,J.C.Huang,C.C.Jien,andC.H.Liao,“Symmetrically-gradedInAlAs/InxGa1-x/GaAsMHEMTwithhigh-temperaturesability,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalCheng-KungUniversity,Taiwan,R.O.C.,p.64,2006.K.H.Su,W.C.Hsu,C.S.Lee,P.J.Hu,R.S.Hsiao,J.F.Chen,andT.W.Chi,“Highly-StableThermalCharacteristicsofaHighElectron-MobilityTransistorwithaNovelIn0.3Ga0.7As0.99N0.01(Sb)DiluteChannel,”InternationalConferenceonSolidStateDevicesandMaterials(SSDM),Yokoama,Japan,2006.K.H.Su,W.C.Hsu,Y.S.Lin,C.S.Lee,andC.L.Wu,“ImprovedSymmetricDoped-ChannelHeterostructureField-EffectTransistor,”13thInternationalSymposiumonthePhysicsofSemiconductorsandApplications,p.B1-05,Jeju,Korea,2006.W.C.Hsu,J.C.Huang,C.S.Lee,D.H.Huang,andM.F.Huang,“Temperature-DependentCharacteristicsofd-DopedInAlAs/InxGa1-xAs/InPHEMTswithDifferentChannelStructures,”13thInternationalSymposiumonthePhysicsofSemiconductorsandApplications,p.P2-23,Jeju,Korea,2006.T.B.Wang,W.C.Hsu,R.T.Hsu,Y.H.Wu,andY.S.Lin,“Annealingeffectonthebufferlayerofhigh-qualitycrystallineGaN,”28thInternationalConferenceonthePhysicsofSemiconductors,Vienna,Austria,2006.I.L.Chen,I.C.Hsu,F.I.Lai,C.H.Chiou,H.C.Kuo,W.C.Hsu,G.Lin,H.D.Yang,andJ.Y.Chi,“SingleModeInGaAsPhotonicCrystalVertical-CavitySurface-EmittingLasers”,CLEO/QELSandPhAST,2006.I.L.Chen,W.C.Hsu,H.C.Kuo,T.D.LeeandC.H.Chiou,“Lowthresholdcurrentdensitylong-wavelength,highstrainedInGaAslasergrownbyMOCVD,”3rdInternationalConferenceonMaterialsforAdvancedTechnologies(ICMAT),2005.Y.J.Chen,W.C.Hsu,T.B.Wang,C.H.Tseng,C.S.Lee,andH.H.Chen,“Gate-metal-relatedKinkEffectforMetamorphicHighElectronMobilityTransistors(MHEMTs),”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalChiao-TungUniversity,Taiwan,R.O.C.,p.205,2004.Y.J.Chen,W.C.Hsu,C.S.Lee,J.C.Huang,H.H.Chen,C.H.Chen,andW.Y.Yang,“Aδ-dopedInAlAs/InGaAsMetamorphicHEMTwithHigh-TemperatureThermalStability,”InternationalElectronDevicesandMaterialsSymposia(IEDMS),NationalChiao-TungUniversity,Taiwan,R.O.C.,p.517,2004.Y.J.Chen,T.B.Wang,K.H.Su,andW.C.Hsu,“In0.425Al0.575As/In0.65Ga0.35AsmetamorphicHEMTonGaAs,”the5thInternationalVacuumElectronSourcesConference,Beijing,Chia,372,2004.S.J.Yu,W.C.Hsu,Y.J.Li,andY.J.Chen,“Investigationofstepgradedchannelheterostructurefieldeffecttransistorwithhighgatevoltageswing,”FourthInternationalWorkshoponJunctionTechnology(IWJT-2004),FudanUniversity,Shanghai,China,pp.210-212,2004.C.S.Lee,W.C.Hsu,Y.J.Chen,andJ.C.Huang,“AnalyticModelingforCurrent-VoltageCharacteristicsandDrain-InducedBarrier-Lowering(DIBL)PhenomenonoftheInGaP/InGaAs/GaAsPDCFET,”The12thSeoulInternationalSymposiumonthePhysicsofSemiconductorsandApplications-2004,Gyeongju,Korea,p.46,2004.W.C.Hsu,Y.J.Chen,Y.W.Chen,Y.J.Li,T.B.Wang,andC.L.Wu,“TheIn0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35AsCompositeChannelMetamorphicHEMT,”ElectronDevicesandMaterialsSymposia(EDMS2003),NationalTaiwanOceanUniversity,Taiwan,R.O.C.,pp.265-268,2003.W.C.Hsu,J.C.Huang,andC.S.Lee,“Off-StateBreakdownModelingforHigh-Schottky-Barrierd-dopedInGaP/InGaAs/InPHighElectronMobilityTransistor,”ElectronDevicesandMaterialsSymposia(EDMS2003),NationalTaiwanOceanUniversity,Taiwan,R.O.C.,pp.421-424,2003.C.S.Lee,W.C.Hsu,andJ.C.Huang,“AnalyticModelingforDrain-InducedBarrier-Lowering(DIBL)PhenomenonoftheInGaP/InGaAs/GaAsPseudomorphicDoped-ChannelField-EffectTransistor,”SymposiumonNanoDeviceTechnology2003(SNDT2003),pp.226-229,14-15May,2003.C.S.Lee,W.C.Hsu,andY.C.Chen,“Bias-tunableMultiple-Gm-PlateauCharacteristicsofanInGaAs/GaAsd-HEMTUsngaGradedSuperlatticeSpcaer,”SymposiumonNanoDeviceTechnology2003(SNDT2003),pp.234-237,14-15May,2003.Y.W.ChenandW.C.Hsu,“HighBreakdownInGaP/InGaAsTunnelingRealSpaceTransferHEMT,”2002ConferenceonOptoelectronicandMicroelectronicMaterialsandDevices(COMMAD2002),Sydney,Australia,11-13Dec.,2002.Y.J.LiandW.C.Hsu,“InvestigationofmetamorphichighelectronmobilitytransistorwithanInxGa1-xAsgradedchannel,”InternationalElectronDevicesandMaterialsSymposia(IEDMS2002),NationalTaiwanUniversity,Taiwan,R.O.C.,p.778,2002.Y.W.Chen,W.C.Hsu,R.T.Hsu,andY.H.Wu,“FabricationofLowDarkCurrentInGaAs(P)PINPhotodiodes,”InternationalElectronDevicesandMaterialsSymposia(IEDMS2002),NationalTaiwanUniversity,Taiwan,R.O.C.,p.774,2002.Y.J.LiandW.C.Hsu,“Al0.2Ga0.8As/In0.22Ga0.78AsPseudomorphicDH-MODFETwithGaAs/AlGaAsSuperlatticeBufferLayer,”26thInternationalConferenceonthePhysicsofSemiconductors,Edinburgh,Scotland,UK,2002.Y.W.Chen,W.C.Hsu,R.T.Hsu,andY.H.Wu,“InvestigationofGradedBaseInGaP/GaAsHBT,”TheEighthMilitarySymposiumonFundamentalScience,pp.C1-12~C1-15,2001.W.C.Hsu,“ImprovedElectronMobilityandTransconductanceRangeUsingGradedCompositionChannel,”ProceedingofAdvancedCompoundSemiconductorMaterialsandDevices,Chiba,Japan,pp.138,2001.Y.S.Lin,W.C.Hsu,andC.H.Wu,“HighbreakdownvoltageIn0.49Ga0.51P/In0.25Ga0.75As/GaAsHEMTbrownbyMOCVD,”1999ElectronDevicesandMaterialsSymposia,R.O.C.,pp.481-484,1999.Y.J.Li,H.M.Shieh,J.S.Su,M.J.Kao,andW.C.Hsu,“ImprovedDoubleDelta-DopedInGaAs/GaAsField-EffectTransistorswithSymmetricGradedChannelbyMOCVD,”TheSixthMilitarySymposiumonFundamentalScience,pp.307-312,1999.Y.S.Lin,W.C.Hsu,J.S.Su,andW.Lin,“Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InPheterostructurefield-effecttransistorswithhigh-breakdownvoltage,”1998Internationalphotonicsconference,Taipei,Taiwan,R.O.C.,pp.614-616,1998.C.S.Lee,W.C.Hsu,H.M.Shieh,J.S.Su,S.Y.JainandW.Lin,”Dual-ModeInAlAsSb/InGaAs/InPHeterostructureField-EffectTransistors,”InternationalElectronDevicesandMaterialsSymposia(EDMS),NationalChengKungUniversity,Taiwan,R.O.C.,p.90,1998.Y.S.Lin,W.C.Hsu,J.S.Su,J.Z.Huang,Y.H.Wu,S.D.Ho,andW.Lin,“AnimprovedIn0.5Ga0.5P/GaAsdoubleheterostructure-emitterbipolartransistorgrownbyMOCVD,”TheFourthMilitarySymposiumonFundamentalScience,pp.305-314,1997.W.C.Hsu,Y.S.Lin,andJ.S.Su,“HighcurrentgainIn0.5Ga0.5P/GaAsheterostructure-emitter-bipolartransistorutilizingGaAsspacers,”inState-of-the-ArtProgramonCompoundSemiconductorsXXVIsymposium,191stECSMeeting,Montreal,Canada,pp.263-268,1997.S.Y.Lu,Y.S.Lin,C.L.Wu,andW.C.Hsu,“ElectricalcharacteristicsofIn0.5Ga0.5P/GaAsheterostructure-emitterbipolartransistorsusingspacerlayers,”The13thTechnological＆VocationalEducationConferenceofR.O.C.,1998.Y.J.Li,Y.S.Lin,C.L.Wu,andW.C.Hsu,“Symmetricdelta-dopedInGaAs/GaAsfield-effecttransistorswithgradedheterointerface,”The13thTechnological＆VocationalEducationConferenceofR.O.C.,1998.J.S.Su,W.C.Hsu,Y.S.Lin,W.Lin,D.T.Lin,J.Z.Huang,andP.J.Chou,“Enhancedreal-spacetransferind-dopedGaAs/In0.1Ga0.9As/In0.25Ga0.75Astwo-stepchannelheterojunctionsgrownbyLP-MOCVD,”1996InternationalElectronDevicesandMaterialsSymposia,Hsinchu,Taiwan,R.O.C.,pp.111-114,1996.J.S.Su,W.C.Hsu,Y.S.Lin,C.L.Wu,M.S.Tsai,andY.H.Wu,“AnovelInAlAs/InGaAstwo-terminalreal-spacetransferdiode,”2ndChineseOptoelectronicsWorkshop,Tainan,Taiwan,R.O.C.,pp.83-88,1995.C.L.Wu,W.C.Hsu,M.S.Tsai,andH.M.Shieh,“Hotelectronresonanttunnelingindelta-modulation-dopedGaAs/InGaAsfield-effecttransistorsgrownbyMOCVD,”NationalConferenceonElectronicDevicesandMaterialsSymposium(EDMS),Kaohsiung,Taiwan,R.O.C.,1995.T.Y.Lin,M.J.Kao,W.C.Hsu,Y.H.Wu,J.S.Su,andR.T.Hsu,“DCCharacteristicsofTriple-delta-dopedGaAsField-EffectTransistors,”NationalElectronDevicesandMaterialsSymposium(EDMS),Kaoshiung,Taiwan,R.O.C.,pp.126-129,1995.J.S.Wang,R.T.Hsu,andW.C.Hsu,“Novelcharacteristicso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新型高效能穿隧接面之高電子遷移率場效電晶體之技術開發(1/3)(科技部2018)奈米柱陣列結構應用於光檢測器與發光二極體之研究低成本非真空超音波熱裂解噴塗沉積技術之開發與研究(3/3)(國科會2016)OLED光源於植物照明之開發-總計畫暨子計畫一：應用於植物照明OLED光源元件之研究(1/3)(國科會2015)低成本非真空超音波熱裂解噴塗沉積技術之開發與研究(2/3)(國科會2015)低成本非真空超音波熱裂解噴塗沉積技術之開發與研究(1/3)(國科會2014)以低成本的非真空式薄膜成長法製備氧化鋁薄膜應用於高功率之氮化鎵金-氧-半場效電晶體(2/2)(國科會產學小聯盟2014)以低成本的非真空式薄膜成長法製備氧化鋁薄膜應用於高功率之氮化鎵金-氧-半場效電晶體(1/2)(國科會產學小聯盟2013)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(3/3)(國科會2013)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(3/3)(國科會2013)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(3/3)(國科會2013)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(2/3)(國科會2012)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(2/3)(國科會2012)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(2/3)(國科會2012)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(1/3)(國科會2011)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(1/3)(國科會2011)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(1/3)(國科會2011)螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(3/3)(國科會2010)螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(2/3)(國科會2009)新型螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(1/3)(國科會2008)[前瞻光通訊元件之研製與整合子計畫二]InGaAsN光子晶體面射型雷射之研製(2/2)(國科會2007)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(3/3)(國科會2007)[前瞻光通訊元件之研製與整合子計畫二]InGaAsN光子晶體面射型雷射之研製(1/2)(國科會2006)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(2/3)(國科會2006)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(1/3)(國科會2005)高性能磷化銦系列光電元件之研製(3/3)(國科會2005)高性能磷化銦系列光電元件之研製(2/3)(國科會2004)以MOCVD成長InGaAsN光電材料及元件(2/2)(國科會2004)高性能磷化銦系列光電元件之研製(1/3)(國科會2003)以MOCVD成長InGaAsN光電材料及元件(1/2)(國科會2003)在不同基底上成長GaN系列材料及元件技術之建立(國科會2002)InGaAsPIN偵測器元件磊晶技術開發及元件暗電流之改善(國科會2002) 研究計劃 以低成本的非真空式薄膜成長法製備氧化鋁薄膜應用於高功率之氮化鎵金-氧-半場效電晶體(1/3)(國科會產學小聯盟2013)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(3/3)(國科會2013)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(3/3)(國科會2013)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(3/3)(國科會2013)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(2/3)(國科會2012)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(2/3)(國科會2012)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(2/3)(國科會2012)適用於室內照明之低色溫、高演色性、高照明效率的白光LED燈具之開發(1/3)(國科會2011)結合材料純化與雷射技術改善有機材料之特性及高效率軟性OLED元件之開發(1/3)(國科會2011)以溶液氧化法成長表面鈍化層於氮化鋁鎵/氮化鎵高電子移動率電晶體之研究(1/3)(國科會2011)螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(3/3)(國科會2010)螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(2/3)(國科會2009)新型螢光材之開發及其應用於提高太陽能電池效－子計畫一：有機薄膜太陽能電池轉換效提昇之研究(1/3)(國科會2008)[前瞻光通訊元件之研製與整合子計畫二]InGaAsN光子晶體面射型雷射之研製(2/2)(國科會2007)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(3/3)(國科會2007)[前瞻光通訊元件之研製與整合子計畫二]InGaAsN光子晶體面射型雷射之研製(1/2)(國科會2006)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(2/3)(國科會2006)以砷化鎵基板成長長波長高壓縮性應變量子井面射型雷射(1/3)(國科會2005)高性能磷化銦系列光電元件之研製(3/3)(國科會2005)高性能磷化銦系列光電元件之研製(2/3)(國科會2004)以MOCVD成長InGaAsN光電材料及元件(2/2)(國科會2004)高性能磷化銦系列光電元件之研製(1/3)(國科會2003)以MOCVD成長InGaAsN光電材料及元件(1/2)(國科會2003)在不同基底上成長GaN系列材料及元件技術之建立(國科會2002)InGaAsPIN偵測器元件磊晶技術開發及元件暗電流之改善(國科會2002) 開授課程 110學年度上學期半導體元件 指導學生 本學年度實驗室成員 博士後賴英男博士班曾靖翔張竹君賴文鋒游政瑒洪皓君石舜丞碩士班洪郁涵黃崇傑郭崇宇賴敘辰張閎耆吳昀芳張芳瑜林紜汝洪照欽陳勁宇 已畢業學生 博士班謝和銘&nbsp&nbsp吳昌崙&nbsp&nbsp許榮泰&nbsp&nbsp吳育輝&nbsp&nbsp高明哲&nbsp&nbsp蘇建信&nbsp&nbsp林育賢&nbsp&nbsp李景松&nbsp&nbsp李亦顓&nbsp&nbsp陳彥瑋&nbsp&nbsp陳永嘉&nbsp&nbsp陳奕良&nbsp&nbsp王宗斌&nbsp&nbsp黃俊瑞&nbsp&nbsp黃俊欽&nbsp&nbsp黃東海&nbsp&nbsp余書振&nbsp&nbsp蘇科化&nbsp&nbsp賴英男&nbsp&nbsp廖翊博&nbsp&nbsp王建勛&nbsp&nbsp劉漢胤&nbsp&nbsp姚恩平&nbsp&nbsp周伯羿&nbsp&nbsp何秋聖&nbsp&nbsp高安勇&nbsp&nbsp黃一平碩士班110廖俊淵&nbsp&nbsp巴冠仁&nbsp&nbsp張鐙元&nbsp&nbsp詹鈞皓&nbsp&nbsp廖承澤109李宜靜&nbsp&nbsp曾祥光&nbsp&nbsp石哲維&nbsp&nbsp方翰陞&nbsp&nbsp葉俊佑108張永郁&nbsp&nbsp曾俊堯&nbsp&nbsp饒庭瑋&nbsp&nbsp紀柏丞&nbsp&nbsp黃志傑107林彥行&nbsp&nbsp陳睿璿&nbsp&nbsp張軼倫&nbsp&nbsp藍振倫&nbsp&nbsp張哲倫106林東諭&nbsp&nbsp崔育維&nbsp&nbsp洪群程&nbsp&nbsp江威儀&nbsp&nbsp曾致齊&nbsp&nbsp葉育銘&nbsp&nbsp蔡忠翰105林志偉&nbsp&nbsp李奕穎104蔡亦哲&nbsp&nbsp王嘉亨&nbsp&nbsp李承軒&nbsp&nbsp洪昇暉103陳韋帆&nbsp&nbsp王藝璇&nbsp&nbsp廖翊惟&nbsp&nbsp吳宇勝102周冠宏&nbsp&nbsp歐文家&nbsp&nbsp楊卓能101鄭銘祥&nbsp&nbsp李國弘&nbsp&nbsp陳暐旻100陳建中&nbsp&nbsp劉相瑋&nbsp&nbsp張祐99史梅君&nbsp&nbsp蔡育貽&nbsp&nbsp許振嘉&nbsp&nbsp黃宜琳98葉書瑋&nbsp&nbsp陳奕志&nbsp&nbsp蕭可欣&nbsp&nbsp劉衍昌97黃惠敏&nbsp&nbsp呂添裕&nbsp&nbsp蔡志明&nbsp&nbsp林任棋&nbsp&nbsp莊仕銘96胡?榕&nbsp&nbsp楊淵丞&nbsp&nbsp鄒????磊&nbsp&nbsp葉炅翰95黃明風&nbsp&nbsp廖英凱&nbsp&nbsp吳宗曄&nbsp&nbsp陳威志&nbsp&nbsp李嘉元94林三富&nbsp&nbsp王安邦&nbsp&nbsp呂專豪&nbsp&nbsp張偉成93曾靖翔&nbsp&nbsp陳勝斌&nbsp&nbsp蘇俊龍92羅炎國&nbsp&nbsp林志民91丁建楠90王升勇&nbsp&nbsp黃國原89鮑正銘&nbsp&nbsp蔡韋志88葉佳彥&nbsp&nbsp吳志宏&nbsp&nbsp陳重光&nbsp&nbsp楊清舜87盧協益 特殊榮譽 中華民國中山學術文化基金會中山學術著作獎(107年)中國電機工程師學會傑出工程教授獎(民國97年)。

成大特聘教授(民國91、94年、97年)。

成大教學特優教師(民國96年)。

84年中國工程師學會高雄分會青年工程師獎(民國84年)。

高等考試電機科及格。

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